期刊
NANO LETTERS
卷 16, 期 9, 页码 5482-5487出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.6b01914
关键词
Transition metal dichalcogenides; heterostructures; light:trapping broadband; near-unity absorption; photovoltaics
类别
资金
- U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-SC0001293]
- Resnick Sustainability Institute
- Kavli Nanoscience Institute
- Swiss National Science Foundation [P2EZP2_159101]
- National Science Foundation [1144469]
- Division Of Graduate Education
- Direct For Education and Human Resources [1144469] Funding Source: National Science Foundation
- Swiss National Science Foundation (SNF) [P2EZP2_159101] Funding Source: Swiss National Science Foundation (SNF)
We demonstrate near-unity, broadband absorbing optoelectronic devices using sub-15 nm thick transition metal dichalcogenides (TMDCs) of molybdenum and tungsten as van der Waals semiconductor active layers. Specifically, we report that near-unity light absorption is possible in extremely thin (<15 nm) van der Waals semiconductor structures by coupling to strongly damped optical modes of semiconductor/metal heterostructures. We further fabricate Schottky junction devices using these highly absorbing heterostructures and characterize their optoelectronic performance. Our work addresses one of the key criteria to enable TMDCs as potential candidates to achieve high optoelectronic efficiency.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据