期刊
NANO LETTERS
卷 16, 期 12, 页码 7685-7689出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.6b03752
关键词
III-V semiconductor; quantum dot; heavy hole; spin-orbit interaction; Pauli spin blockade
类别
资金
- Australian Research Council
- EPSRC (UK)
- EPSRC [EP/K004077/1, EP/J003417/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/K004077/1, EP/J003417/1] Funding Source: researchfish
Electrically defined semiconductor quantum dots are attractive systems for spin manipulation and quantum information processing. Heavy-holes in both Si and GaAs are promising candidates for all-electrical spin manipulation, owing to the weak hyperfine interaction and strong spin orbit interaction. However, it has only recently become possible to make stable quantum dots in these systems, mainly due to difficulties in device fabrication and stability. Here, we present electrical transport measurements on holes in a gate defined double quantum dot in a GaAs/AlxGa1-xAs heterostructure. We observe clear Pauli spin blockade and demonstrate that the lifting of this spin blockade by an external magnetic field is highly anisotropic. Numerical calculations of heavy-hole transport through a double quantum dot in the presence of strong spin-orbit coupling show quantitative agreement with experimental results and suggest that the observed anisotropy can be explained by both the anisotropic effective hole g-factor and the surface Dresselhaus spin-orbit interaction.
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