期刊
NANO LETTERS
卷 16, 期 2, 页码 1293-1298出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b04664
关键词
Black phosphorus; zinc oxide nanowire; heterojunction; p-n diode; junction field-effect transistor
类别
资金
- National Research Foundation of Korea (NRF) (NRL program) [2014R1A2A1A01004815]
- National Research Foundation of Korea (NRF) (Nano-Materials Technology Development Program) [2012M3A7B4034985]
- Yonsei University (Future-Leading Research Initiative) [2014-22-0168]
- KIST Institution Program [2 V04010, 2E26420]
- Brain Korea 21 Plus Program
Black phosphorus (BP) nanosheet is two-dimensional (2D) semiconductor with distinct band gap and attracting recent attention from researches because it has some similarity to gapless 2D semiconductor graphene in the following two aspects: single element (P) for its composition and quite high mobilities depending on its fabrication conditions. Apart from several electronic applications reported with BP nanosheet, here we report for the first time BP nanosheet-ZnO nanowire 2D-1D heterojunction applications for p-n diodes and BP-gated junction field effect transistors (JFETs) with n-ZnO channel on glass. For these nanodevices, we take advantages of the mechanical flexibility of p-type conducting of BP and van der Waals junction interface between BP and ZnO. As a result, our BP-ZnO nanodimension p-n diode displays a high ON/OFF ratio of similar to 10(4) in static rectification and shows kilohertz dynamic rectification as well while ZnO nanowire channel JFET operations are nicely demonstrated by BP gate switching in both electrostatics and kilohertz dynamics.
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