4.4 Article

Record quantum efficiency from strain compensated superlattice GaAs/GaAsP photocathode for spin polarized electron source

期刊

AIP ADVANCES
卷 13, 期 8, 页码 -

出版社

AIP Publishing
DOI: 10.1063/5.0159183

关键词

-

向作者/读者索取更多资源

Photocathodes based on GaAs and other III-V semiconductors are capable of producing highly spin-polarized electron beams. A GaAs/GaAsP superlattice photocathode with a Distributed Bragg Reflector (DBR) underneath was fabricated to increase the quantum efficiency (QE). The configuration of a Fabry-Perot cavity between the DBR and GaAs surface enhances the absorption of incident light, resulting in a higher QE. These photocathode structures achieved record quantum efficiencies exceeding 15% and electron spin polarization of about 75% when illuminated with near-bandgap photon energies.
Photocathodes based on GaAs and other III-V semiconductors are capable of producing highly spin-polarized electron beams. GaAs/GaAsP superlattice photocathodes exhibit high spin polarization; however, the quantum efficiency (QE) is limited to 1% or less. To increase the QE, we fabricated a GaAs/GaAsP superlattice photocathode with a Distributed Bragg Reflector (DBR) underneath. This configuration creates a Fabry-Perot cavity between the DBR and GaAs surface, which enhances the absorption of incident light and, consequently, the QE. These photocathode structures were grown using molecular beam epitaxy and achieved record quantum efficiencies exceeding 15% and electron spin polarization of about 75% when illuminated with near-bandgap photon energies.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.4
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据