期刊
NANO LETTERS
卷 16, 期 4, 页码 2168-2173出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b03976
关键词
Germanium; strain; group IV; nanophotonics; optical interconnects; pseudoheterostructure
类别
资金
- AFOSR MURI on Robust and Complex On-Chip Nanophotonics [A9550-09-1-0704]
- APIC Corporation
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Science, ICT & Future Planning [2015R1C1A1A01053117]
- Inha University Research Grant
- Pioneer Research Center Program through the National Research Foundation of Korea (NRF) - Ministry of Science, ICT & Future Planning [2014M3C1A3052580]
- National Physical Science Consortium Fellowship
- National Security Agency
- Stanford Graduate Fellowship
- National Research Foundation of Korea [2015R1C1A1A01053117] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
A silicon-compatible light source is the final missing piece for completing high-speed, low-power on-chip optical interconnects. In this paper, we present a germanium nanowire light emitter that encompasses all the aspects of potential low-threshold lasers: highly strained germanium gain medium, strain-induced pseudoheterostructure, and high-Q nanophotonic cavity. Our nanowire structure presents greatly enhanced photoluminescence into cavity modes with measured quality factors of up to 2000. By varying the dimensions of the germanium nanowire, we tune the emission wavelength over more than 400 nm with a single lithography step. We find reduced optical loss in optical cavities formed with germanium under high (>2.3%) tensile strain. Our compact, high-strain cavities open up new possibilities for low-threshold germanium based lasers for on-chip optical interconnects.
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