期刊
NANO LETTERS
卷 16, 期 3, 页码 1602-1608出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b04296
关键词
Memristor; half-integer quantization; filamentary conduction; nanoelectronics; resistive switching; Cu; SiO2
类别
资金
- Indo-French Centre for Promotion of Advanced Research-CEFIPRA [5102-1]
Memristive devices, whose conductance depends on previous programming history, are of significant interest for building nonvolatile memory and brain-inspired computing systems. Here, we report half-integer quantized conductance transitions G = (n/2) (2e(2)/h) for n = 1, 2, 3, etc., in Cu/SiO2/W memristive devices observed below 300 mV at room temperature. This is attributed to the nanoscale filamentary nature of Cu conductance pathways formed inside SiO2. Retention measurements also show spontaneous filament decay with quantized conductance levels. Numerical simulations shed light into the dynamics underlying the data retention loss mechanisms and provide new insights into the nanoscale physics of memristive devices and trade-offs involved in engineering them for computational applications.
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