期刊
NANO LETTERS
卷 16, 期 4, 页码 2254-2259出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b04538
关键词
2D materials; transition-metal dichalcogenides; graphene; heterostructure; photodetection
类别
资金
- National Key Basic Research Program of China [2015CB921600, 2013CBA01603, 2013CB632700]
- National Natural Science Foundation of China [11374142, 11322441, 61574076]
- Natural Science Foundation of Jiangsu Province [BK20130544, BK20140017, B20150055]
- Fund of the Shanghai Science and Technology Foundation [14JC1406400]
- Specialized Research Fund for the Doctoral Program of Higher Education [20130091120040]
- CAS
- Fundamental Research Funds for the Central Universities
- Collaborative Innovation Center of Advanced Microstructures
van der Waals junctions of two-dimensional materials with an atomically sharp interface open up unprecedented opportunities to design and study functional heterostructures. Semiconducting transition metal dichalcogenides have shown tremendous potential for future applications due to their unique electronic properties and strong light matter interaction. However, many important optoelectronic applications, such as broadband photodetection, are severely hindered by their limited spectral range and reduced light absorption. Here, we present a p-g-n heterostructure formed by sandwiching graphene with a gapless band structure and wide absorption spectrum in an atomically thin p-n junction to overcome these major limitations. We have successfully demonstrated a MoS2-graphene-WSe2 heterostructure for broadband photodetection in the visible to short-wavelength infrared range at room temperature that exhibits competitive device performance, including a specific detectivity of up to 10(11) Jones in the near-infrared region. Our results pave the way toward the implementation of atomically thin heterostructures for broadband and sensitive optoelectronic applications.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据