期刊
NANO LETTERS
卷 16, 期 3, 页码 1896-1902出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.5b05066
关键词
MoS2; WSe2; MoSe2; field-effect transistor; two-dimensional; ohmic contact
类别
资金
- NSF [DMR-1308436]
- WSU Presidential Research Enhancement Award
- NSF/AFOSR EFRI 2-DARE [EFMA-1433459]
- Gordon and Betty Moore Foundation's EPiQS [GBMF4416]
- National Science Foundation [DMR-1410428]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1410428, 1308436] Funding Source: National Science Foundation
- Emerging Frontiers & Multidisciplinary Activities
- Directorate For Engineering [1433459] Funding Source: National Science Foundation
We report a new strategy for fabricating 2D/2D low-resistance ohmic contacts for a variety of transition metal dichalcogenides (TMDs) using van der Waals assembly of substitutionally doped TMDs as drain/source contacts and TMDs with no intentional doping as channel materials. We demonstrate that few-layer WSe2 field-effect transistors (FETs) with 2D/2D contacts exhibit low contact resistances of similar to 0.3 k Omega mu m high on/off ratios up to >10(9), and high drive currents exceeding 320 mu A mu m(-1). These favorable characteristics are combined with a two-terminal field-effect hole mobility mu(FE) approximate to 2 X 10(2) cm(2) V(-1)s(-1) at room temperature, which increases to >2 X 10(3) cm(2) V-1 s(-1) at cryogenic temperatures. We observe a similar performance also in MoS2 and MoSe2 FETs with 2D/2D drain and source contacts. The 2D/2D low-resistance ohmic contacts presented here represent a new device paradigm that overcomes a significant bottleneck in the performance of TMDs and a wide variety of other 2D materials as the channel materials in postsilicon electronics.
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