期刊
NANO LETTERS
卷 17, 期 1, 页码 110-119出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.6b03592
关键词
Bismuth nanowire; galvanomagnetic effect; Hall effect; magnetoresistance; focused ion beam
类别
资金
- JSPS Kakenhi [15E104142]
- NIMS Nano-fabrication Platform of the Nanotechnology Platform Project
- Nanotechnology Platform - Ministry of Education, Culture, Sports, Science, and Technology (MEXT) [12024046]
- Thermal and Electric Energy Technology Foundation
- Tanigawa Fund Promotion of Thermal Technology
- Advanced Research Program for Energy and Environmental Technologies of the New Energy and Industrial Technology Development Organization (NEDO), Japan
- [26886016]
- Grants-in-Aid for Scientific Research [15H04142, 15K05120] Funding Source: KAKEN
The galvanomagnetic effect is evaluated experimentally and theoretically in an individual bismuth nanowire encapsulated within a quartz template. A small section of the side surface of the encapsulated bismuth nanowire is exposed using focused ion beam processing, and a total of six carbon film electrodes are fabricated on the exposed nanowire surface by in situ deposition in order to be able to perform electrical measurements on the nanowire. The results show that the galvanomagnetic effect in the nanowire is affected by carrier collisions at the nanowire boundary; this is particularly the case at low temperatures. The Hall mobilities of electrons and holes are determined based on the measured Hall coefficient and magnetoresistivity values. It is found that the carrier mobility in the bismuth nanowire is lower than that in bulk bismuth and that it plateaus at low temperatures, as predicted by the calculation model used in the study, which takes into account the carrier mean free path limitation imposed by the small diameter of the nanowire.
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