4.8 Article

Conductance Quantization at Zero Magnetic Field in InSb Nanowires

期刊

NANO LETTERS
卷 16, 期 6, 页码 3482-3486

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.6b00051

关键词

Quantum point contact; conductance quantization; nanowire; InSb; subband; orbital effects

资金

  1. Marie Curie ITN S3Nano
  2. ERC [STATOPINS 638760]
  3. NWO/FOM
  4. Microsoft Corporation Station Q

向作者/读者索取更多资源

Ballistic electron transport is a key requirement for existence of a topological phase transition in proximitized InSb nanowires. However, measurements of quantized conductance as direct evidence of ballistic transport have so far been obscured due to the increased chance of backscattering in one-dimensional nanowires. We show that by improving the nanowire metal interface as well as the dielectric environment we can consistently achieve conductance quantization at zero magnetic field. Additionally we study the contribution of orbital effects to the sub-band dispersion for different orientation of the magnetic field, observing a near-degeneracy between the second and third sub-bands.

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