期刊
NANO LETTERS
卷 17, 期 1, 页码 322-327出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.6b04125
关键词
Dangling bond nanowires; interconnects; atomic scale switch; quantum transport
类别
资金
- Natural Sciences and Engineering Research Council of Canada (NSERC)
A single line of dangling bonds (DBs) on Si(100)-2 x 1:H surface forms a perfect metallic atomic-wire. In this work, we investigate quantum transport properties of such dangling bond wires (DBWs) by a state-of-the-art first-principles technique. It is found that the conductance of the DBW can be gated by electrostatic potential and orbital overlap due to only a single DB center (DBC) within a distance of similar to 16 angstrom from the DBW. The gating effect is more pronounced for two DBCs and especially, when these two DB gates are within similar to 3.9 angstrom from each other. These effective length scales are in excellent agreement with those measured in scanning tunnelling microscope experiments. By analyzing transmission spectrum and density of states of DBC-DBW systems, with or without subsurface doping, for different length of the DBW, distance between DBCs and the DBW, and distance between DB gates, we conclude that charge transport in a DBW can be regulated to have both an on-state and an off-state using only one or two DBs.
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