4.8 Article

Blue Phosphorene Oxide: Strain-Tunable Quantum Phase Transitions and Novel 2D Emergent Fermions

期刊

NANO LETTERS
卷 16, 期 10, 页码 6548-6554

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.6b03208

关键词

Two-dimensional material; first-principles calculations; strain engineering; quantum phase transition; emergent fermion; universal optical absorbance

资金

  1. National Natural Science Foundation of China [11504122, 11547192]
  2. Singapore MOE Academic Research Fund [SUTD-T1-2015004]
  3. Jiangsu Key Laboratory of Modern Measurement Technology and Intelligent Systems
  4. Natural Science Foundation of the Higher Education Institutions of Jiangsu Province [15KJB140001]

向作者/读者索取更多资源

Tunable quantum phase transitions and novel emergent fermions in solid-state materials ate fascinating, subjects of research. Here, we propose a new stable two-dimensional (2D) material, the blue phosphorene oxide (BPO), which exhibits both. On the basis of first-principles calculations, we show that its equilibrium,state is a narrow-bandgap semiconductor with three hands at low energy. Remarkably, a moderate strain can drive a semiconductor-to-semimetal quantum phase transition in BPO. At the critical transition point, the three bands cross at a single point at Fermi level, around which the quasiparticles, are a novel type of 2D pseudospin-1 fermions. Going beyond the transition, the system becomes a symmetry-protected semimetal, for which the conduction and: valence bands touch quadratically at a single Fermi point that is protected by symmetry, and the low-energy quasiparticles become another novel type of 2D double Weyl fermions. We construct effective models characterizing the phase transition and these novel emergent-fermions, and we point out several exotic effects, including super Klein tunneling, supercollimation, and universal optical absorbance. Our result reveals BPO as an intriguing platform for the exploration of fundamental properties of quantum phase transitions and novel emergent fermions and also suggests its great potential in nano-scale device applications.

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