期刊
NANO LETTERS
卷 16, 期 5, 页码 3253-3259出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.6b00788
关键词
Multiscale patterning; electron-beam lithography; selective peeling; nanogaps; plasmonics
类别
资金
- National Natural Science Foundation of China [11274107, 61204109, 11574078]
- Foundation for the authors of National Excellent Doctoral Dissertation of China [201318]
- Natural Science Foundation of Hunan Province [2015JJ1008, 2015RS4024]
We report a unique lithographic process, termed Sketch and Peel lithography (SPL), for fast, clean, and reliable patterning of metallic structures from tens of nanometers to submillimeter scale using direct writing technology. The key idea of SPL process is to define structures using their presketched outlines as the templates for subsequent selective peeling of evaporated metallic layer. With reduced exposure area, SPL process enables significantly improved patterning efficiency up to hundreds of times higher and greatly mitigated proximity effect compared to current direct writing strategy. We demonstrate that multiscale hierarchical metallic structures with arbitrary shapes and minimal feature size of similar to 15 nm could be defined with high fidelity using SPL process for potential nanoelectronic and nano-optical applications.
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