Synthetic two-dimensional electronics for transistor scaling

Two-dimensional (2D) materials have been considered to hold promise for transistor ultrascaling, thanks to their atomically thin body immune to short-channel effects. The lower channel size limit of 2D transistors is yet to be revealed, as this size is below the spatial resolution of most lithographic techniques. In recent years, chemical approaches such as chemical vapor deposition (CVD) and metalorganic CVD (MOCVD) have been established to grow atomically precise nanostructures and heterostructures, thus allowing for synthetic construction of ultrascaled transistors. In this review, we summarize recent developments on the precise synthesis and defect engineering of electronic nanostructures/heterostructures aiming for transistor applications. We demonstrate with rich examples that ultrascaled 2D transistors are achievable by finely tuning the growth-as-fabrication process and could host a plethora of new device physics. Finally, by plotting the scaling trend of 2D transistors, we conclude that synthetic electronics possess superior scaling capability and could facilitate the development of post-Moore nanoelectronics.

Automated summary

Two-dimensional materials are promising for ultrascaling transistors due to their immune short-channel effects. Chemical approaches like chemical vapor deposition and metalorganic CVD have been established to synthesize nanostructures and heterostructures for ultrascaled transistors. This review summarizes recent developments on the precise synthesis and defect engineering of electronic nanostructures/heterostructures for transistor applications. It is demonstrated that ultrascaled 2D transistors can be achieved by finely tuning the growth-as-fabrication process, which could lead to new device physics. Additionally, synthetic electronics possess superior scaling capability and could facilitate the development of post-Moore nanoelectronics.