4.4 Article

Understanding the adsorption behavior of C2H3Cl on pristine, Al-, and Ga-doped boron nitride nanosheets

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DOI: 10.1016/j.comptc.2023.114318

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Boron nitride; DFT; Non-covalent interaction; QTAIM; Vinyl chloride

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Using density functional theory, the study investigated the interactions between vinyl chloride and pristine, Al-doped, and Ga-doped boron nitride nanosheets, finding that the insertion of dopant atoms significantly altered the HOMO-LUMO energy gap position, with the Ga-doped system emerging as the most promising material for sensors or gas removal devices. In-depth analysis of the electronic structure was conducted through various methods, including total density of state examination and quantum theory approaches, shedding light on the underlying nature of gas-nanosheet interactions.
Utilizing density functional theory, an investigation was conducted to scrutinize the nature of interactions between the vinyl chloride and the pristine, Al-, and Ga-doped boron nitride nanosheets. A range of functionals, namely B3LYP-D3, PBE0, omega B97XD, and M06-2X, were meticulously selected for all structural configurations. Each functional was harmoniously coupled with the 6-311G(d) basis functions. In-depth analysis of the electronic sructure was accomplished through a comprehensive examination of the total density of state. Furthermore, the examination encompassed the application of quantum theory of atoms in molecules, natural bond orbitals, and non-covalent interaction approaches to elucidate the underlying nature of the gas-nanosheet interactions. Remarkably, the insertion of dopant atoms into the nanosheets resulted in a striking alteration of the location of the HOMO-LUMO energy gap. Among all the adsorbents, Ga-doped system emerged as the preeminent material, exhibiting superior potential for deployment in the creation of sensors or gas removal apparatuses.

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