Multi-Wavelength Pulse Generation Using Narrow-Gap Topological Crystalline Insulator Pb1-XSnXTe

A multi-wavelength pulse is generated using chemical vapor deposition method (CVD) to fabricate the topological crystalline insulator (TCI) Pb1-XSnXTe as a saturated absorber (SA). Compared with other SA materials, Pb1-XSnXTe have advantages of narrowbandgap and high optical absorption in the near-infrared region. The laser produced a stable four-wavelength lasing configuration characterized by a wavelength spacing of approximately 2 nm, with pulse duration, repetition rate, and signal-to-noise ratio (SNR) of 0.899 to 0.854 mu s, 1.08 to 1.15 MHz, and 31.5 dB, respectively. The results indicate that the Pb1-XSnXTe-SA is suitable for pulsed generation in the near-infrared region and its potential in various fields, including super-resolution imaging, high-density optical storage, and three-dimensional laser lithography.

Automated summary

A multi-wavelength pulse is generated using chemical vapor deposition method (CVD) to fabricate the topological crystalline insulator (TCI) Pb1-XSnXTe as a saturated absorber (SA). The TCI material has a narrow bandgap and high optical absorption in the near-infrared region, making it suitable for pulsed generation. It shows potential in various fields such as super-resolution imaging, high-density optical storage, and three-dimensional laser lithography.