4.6 Article

Thermoelectric properties of Ga-doped InSb alloys

期刊

VACUUM
卷 219, 期 -, 页码 -

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PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.vacuum.2023.112761

关键词

InSb alloys; Ga doping; Structural properties; Thermoelectric properties; Power factor

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This paper systematically studied the internal structure and thermoelectric properties of In1-xGaxSb alloys prepared by melting synthesis at 1123 K. The results showed that doping with Ga in the In sites led to a significant increase in the Seebeck coefficient and power factor, while reducing the thermal conductivity. The maximum dimensionless figure of merit was observed at 403 K.
Internal structure and thermoelectric properties of In1-xGaxSb alloys, prepared by melting synthesis at 1123 K, were systematically studied in this paper. Crystal structure was investigated by XRD analysis. All samples exhibited crystalline structure of single InSb phase. Transport and electrical properties were studied against temperature elevating. Electrical conductivity was determined via the standard four probe method. The thermal behavior of the electrical conductivity over the temperature range between 273 K and 473 K showed semi-conducting behavior. Seebeck coefficient measurements were conducted via differential method in the temperature range 273-473 K. The measurements of Seebeck coefficient confirmed the electrical conductivity behavior of the samples. The maximum obtained Seebeck coefficient value vertical bar S vertical bar of the parent InSb compound was observed at 224 mu V/K, obtained at 273 K. The alloy has been doped with Ga in order to enhance thermoelectric properties. Results showed that introducing of Ga into In sites leads to significant increase in the Seebeck coefficient up to 330.4 mu V/K. Power factor was estimated from the measurements of the electrical conductivity and the Seebeck coefficient. Interesting enhancement in the thermoelectric power factor was observed with Gadoping. The maximum power factor was obtained for the most doped sample exhibiting 2.3 mu Wm(-1) K-2 at 273 K. The thermal conductivity was obviously reduced by substituting In with Ga. The dimensionless figure of merit was estimated showing an enhancement with the Ga addition. The maximum recorded ZT was 0.017 observed at 403 K.

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