Stress simulation of 6-inch SiC single crystal

With the size of SiC boule increasing, the problem of crystal creaking becomes more and more serious. In this work, residual stress in SiC boule is calculated by conducting stress simulation based on COMSOL and STR-VR software. A direct diagram comparing on crystal stress distribution is given. Besides, we provide relevant indications for the complete realization of large size SiC bulk with low stress for growing mainstream 6-inch SiC bulk with competitive thickness (40-50 mm) and low residual stress. And a 6-inch stress-free SiC bulk with improved quality was successfully fabricated based on our theoretical investigations.

Automated summary

As the size of SiC boule increases, the problem of crystal creaking becomes more serious. In this work, the residual stress in SiC boule is calculated through stress simulation using COMSOL and STR-VR software. A direct diagram comparing the stress distribution in the crystal is provided. Relevant indications for growing large size SiC bulk with low stress, as well as fabricating a 6-inch stress-free SiC bulk with improved quality, are given based on our theoretical investigations.