Controllable growth of two-dimensional NbSe2 flakes with irregular geometries under ion etching

Nanostructured NbSe2 has gained enormous interest in recent decades owning to its exotic properties and po- tential applications. Although two-dimensional (2D) NbSe2 structures have been successfully synthesized on various substrates, it remains a great challenge to prepare NbSe2 nanostructures with high edge-to-surface ratio, which is highly desirable for potential applications in catalysis. Here, we demonstrate that 2D NbSe2 with irregular geometries can be controllably grown on highly oriented pyrolytic graphite substrates via tuning the subtle balance between growth and ion etching. Atomic force microscopy, transmission electron microscopy, Raman spectroscopy and X-ray photoelectron spectroscopy were employed to characterize the morphology and composition of the as-grown NbSe2 flakes. Our work highlights the important role of ion etching and paves the way for the growth of 2D materials with various geometries.

Automated summary

Nanostructured NbSe2 is of great interest due to its exotic properties and potential applications. However, it remains a challenge to prepare NbSe2 nanostructures with high edge-to-surface ratio, which is highly desirable for catalysis applications. In this study, we demonstrate the controllable growth of 2D NbSe2 with irregular geometries on highly oriented pyrolytic graphite substrates by tuning the balance between growth and ion etching. Characterization using various techniques confirms the morphology and composition of the as-grown NbSe2 flakes. Our work highlights the important role of ion etching and provides a pathway for growing 2D materials with different geometries.