期刊
THIN SOLID FILMS
卷 784, 期 -, 页码 -出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2023.140065
关键词
Crystal structure; Molecular beam epitaxy; Nitrides; Semiconducting aluminum compounds; Semiconducting III -V materials
Cubic AlN films were successfully grown on MgO substrates using a two-step cubic GaN buffer layer. The two-step buffer layer was found to play a crucial role in the epitaxial growth of c-AlN, resulting in improved crystallinity compared to one-step and nonGaN buffer layers.
Cubic AlN (c-AlN) films were grown on MgO (001) substrates through the use of a two-step cubic GaN (c-GaN) buffer layer using radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE) technique. The two-step cGaN buffer layer was found to be crucial for the epitaxial growth of c-AlN, as it showed a specific epitaxial relationship between c-AlN and c-GaN along the MgO [100] zone axis. On the other hand, the c-AlN films grown with the one-step and nonGaN buffer layers showed columnar grain structure. The optical study found that the cAlN films grown with the two-step c-GaN buffer layer had an indirect bandgap energy of 4.99 +/- 0.02 eV, which is consistent with previous experimental data and theoretical calculations. The c-AlN films grown with the one-step and nonGaN buffer layers had indirect bandgap energies of 5.00 +/- 0.02 eV and 5.18 +/- 0.02 eV, respectively. These results highlight the importance of the two-step c-GaN buffer layer in enhancing the MBE growth of c-AlN on MgO (001) substrate.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据