Ultra-low turn-on voltage quasi-vertical GaN Schottky barrier diode with homogeneous barrier height

Quasi-vertical Schottky Barrier Diodes (SBDs) with near to ideal turn-on voltage and ideality factor (n) of 1.02, were fabricated on a GaN on Si substrate. The average turn-on voltage and on-resistance values were found to be 0.23 & PLUSMN; 0.005 V (at 1 A/cm2) and 1.76 & PLUSMN; 0.11 m & omega;cm2, respectively with diode series resistance of 11 & OHM;. The analysis of the current-voltage curve revealed a temperature-independent barrier height, however the capacitance-voltage method showed a negative temperature coefficient. This discrepancy is discussed in the paper. Variable range hopping through dislocations is shown to be the dominant reverse current leakage mechanisms identified in the fabricated diode, with a characteristic temperature, T0 of 2 x 1010 K.

Automated summary

This article introduces quasi-vertical Schottky Barrier Diodes (SBDs) fabricated on a GaN on Si substrate, which exhibit near ideal turn-on voltage and ideality factor (n = 1.02). The study shows that the diodes have an average turn-on voltage of 0.23 ± 0.005 V (at 1 A/cm2) and an on-resistance of 1.76 ± 0.11 mΩcm2, with a diode series resistance of 11Ω. Analysis of the current-voltage curve reveals a temperature-independent barrier height, while the capacitance-voltage method demonstrates a negative temperature coefficient. The dominant reverse current leakage mechanism in the fabricated diode is shown to be variable range hopping through dislocations, with a characteristic temperature, T0, of 2 × 1010 K.