Photovoltaic AlGaAs/GaAs devices for conversion of high-power density laser (800-860 nm) radiation

Photovoltaic converters of high-power (lambda = 800-860 nm, E-LR = 150-550 W/cm(2)) laser radiation (PhotoVoltaic Laser Power Converters - PVLPCs) based on AlGaAs/GaAs heterostructures grown by metalorganic vapor-phase epitaxy have been developed. To increase the output voltage, the space charge region of p-GaAs/n-AlxGa1-4As heterojunction was shifted to the n-AlxGa1-xAs wide-gap layer with a gradual x. The technology for embedding a rear reflector based on TiOx/SiO2/Ag into the photovoltaic converter structure by transferring the heterostructure to a supporting substrate and the method of bonding to form a monolithic structure of the PVLPC has been elaborated. To operate the heterostructures at an increased power density of laser radiation, they have been designed to eliminate possible potential barriers at the heterointerfaces and the frontal contact topology with a high density of the metal grid (50 mu m and 125 mu m contact pitch are under consideration) has been employed. PVLPCs with efficiency of 62% were obtained at the power density of monochromatic radiation (lambda = 850 nm) E-LR = 170 W/cm(2). The finger pitch of 50 mu m allows keeping efficiency more than 56% even with a fivefold increase in laser radiation (up to E-LR = 500 W/cm(2)).

Automated summary

This study developed a high-power photovoltaic converter based on AlGaAs/GaAs heterostructures grown by metalorganic vapor-phase epitaxy. The output voltage was increased by shifting the space charge region and using a rear reflector. The efficiency of the converter was improved by optimizing the potential barriers at the heterointerfaces and using a high-density metal grid.