Insight into the High Mobility and Stability of In2O3:H Film

Wide bandgap semiconductors, particularly In2O3:Sn (ITO), are widely used as transparent conductive electrodes in optoelectronic devices. Nevertheless, due to the strohave beenng scattering probability of high-concentration oxygen vacancy (V-O) defects, the mobility of ITO is always lower than 40 cm(2) V-1 s(-1). Recently, hydrogen-doped In2O3(In2O3:H) films have been proven to have high mobility (>100 cm(2) V-1 s(-1)), but the origin of this high mobility is still unclear. Herein, a high-resolution electron microscope and theoretical calculations are employed to investigate the atomic-scale mechanisms behind the high carrier mobility in In2O3:H films. It is found that V-O can cause strong lattice distortion and large carrier scattering probability, resulting in low carrier mobility. Furthermore, hydrogen doping can simultaneously reduce the concentration of V-O , which accounts for high carrier mobility. The thermal stability and acid-base corrosion mechanism of the In2O3:H film are investigated and found that hydrogen overflows from the film at high temperatures (>250 degrees C), while acidic or alkaline environments can cause damage to the In(2)O(3)grains themselves. Overall, this work provides insights into the essential reasons for high carrier mobility in In2O3:H and presents a new research approach to the doping and stability mechanisms of transparent conductive oxides.

Automated summary

The study found that oxygen vacancy (V-O) defects can cause lattice distortion and carrier scattering, resulting in low carrier mobility in ITO. However, hydrogen doping can reduce the concentration of V-O, which accounts for the high carrier mobility in In2O3:H. Additionally, it was discovered that hydrogen overflows from the film at high temperatures (>250 degrees C), and acidic or alkaline environments can damage the In2O3 grains themselves. This work provides important insights into the mechanisms of high carrier mobility and stability in transparent conductive oxides.