Si/Organic Integrated Narrowband Near-Infrared Photodetector

Spectrally selective narrowband photodetection is critical for near-infrared (NIR) imaging applications, such as for communicationand night-vision utilities. It is a long-standing challenge for detectors based on silicon, to achieve narrowband photodetection without integrating any optical filters. Here, this work demonstrates a NIR nanograting Si/organic (PBDBT-DTBT:BTP-4F) heterojunction photodetector (PD), which for the first time obtains the full-width-at-half-maximum (FWHM) of only 26 nm and fast response of 74 & mu;s at 895 nm. The response peak can be successfully tailored from 895 to 977 nm. The sharp and narrow response NIR peak is inherently attributed to the coherent overlapping between the NIR transmission spectrum of organic layer and diffraction enhanced absorption peak of patterned nanograting Si substrates. The finite difference time domain (FDTD) physics calculation confirms the resonant enhancement peaks, which is well consistent with the experiment results. Meanwhile, the relative characterization indicates that the introduction of the organic film can promote carrier transfer and charge collection, facilitating efficient photocurrent generation. This new device design strategy opens up a new window in developing low-cost sensitive NIR narrowband detection.

Automated summary

This work demonstrates a NIR nanograting Si/organic heterojunction photodetector which achieves narrowband photodetection without integrating optical filters. It obtains a FWHM of only 26 nm and fast response of 74 μs at 895 nm, with the ability to tailor the response peak from 895 to 977 nm. The sharp and narrow response NIR peak is attributed to the coherent overlapping between the NIR transmission spectrum of the organic layer and diffraction enhanced absorption peak of patterned nanograting Si substrates.