4.6 Article

Use of CdZnTe Quasi-Hemispherical Detectors under the Impact of Low Temperatures and High-Gamma Radiation Fluxes

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SENSORS
卷 23, 期 20, 页码 -

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MDPI
DOI: 10.3390/s23208378

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CdZnTe detector; quasi-hemispherical detector; high-gamma radiation flux; IR illumination; operating temperature

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This article discusses the possibilities and limitations of CdZnTe (CZT) quasi-hemispherical detectors operating over a wide temperature range and at high-gamma radiation fluxes. The impact of infrared (IR) illumination parameters on the spectroscopy performance of detectors was investigated, along with the influences of bias voltage values and temperatures on the detectors' operating ability at high-gamma radiation fluxes.
This article discusses the possibilities and limitations of CdZnTe (CZT) quasi-hemispherical detectors operating over a wide temperature range and at high-gamma radiation fluxes. The results of the negative influence of low- and high-operating temperatures, as well as high-radiation fluxes on spectrometric characteristics of CZT detectors and possible ways to eliminate performance deterioration, are presented. The impact of infrared (IR) illumination parameters, such as wavelength and irradiation intensity on the spectroscopy performance of detectors, was investigated. A correctly chosen IR illumination wavelength and intensity were shown to significantly improve the energy resolution of CZT quasi-hemispherical detectors, allowing their stable operation in high-gamma radiation fluxes and extend the operating temperature range toward low temperatures. The influences of bias voltage values and temperatures on the quasi-hemispherical CZT detectors' operating ability at high-gamma radiation fluxes were studied.

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