Recent Progress of Surface Plasmon-Enhanced Light Trapping in GaAs Thin-Film Solar Cells

Light trapping technology is one of the effective ways to improve the performance of solar cells, which can enhance the light absorption and reduce the thickness of the material and thus the expense. In recent years, surface plasmons (SPs) have made considerable progress in this field. By exploiting the light scattering and coupling effects of SPs, the efficiency of solar cells can be improved greatly. The aim of this review is to summarize recent research results of surface plasmon-enhanced GaAs thin-film solar cells, which are technologically mature III-V photovoltaic devices and widely used. Various SP nanostructures employed by different research groups are introduced. It can be concluded that the fabrication method, material, shape, and arrangement of the nanostructures make significant impact on the light trapping effect, as well as the coordination of various SP structures. Key parameters including short-circuit current density (Jsc), open circuit voltage (Voc), power conversion efficiency (PCE), and fill factor (FF) values of typical GaAs thin-film solar cells with different SPs light trapping structures are summarized. Further prospective trends are also proposed for the performance promotion of GaAs solar cells.

Automated summary

Light trapping technology can enhance the performance of solar cells by increasing light absorption and reducing material thickness and cost. Surface plasmons have shown great potential in improving solar cell efficiency through light scattering and coupling effects. This review summarizes recent research on surface plasmon-enhanced GaAs thin-film solar cells, which are widely used photovoltaic devices. Various SP nanostructures employed by different research groups are introduced, and their impact on light trapping is discussed. Key parameters and prospective trends for performance enhancement are also summarized.