期刊
PLASMA SCIENCE & TECHNOLOGY
卷 25, 期 12, 页码 -出版社
IOP Publishing Ltd
DOI: 10.1088/2058-6272/ace677
关键词
the instability of THz plasma waves; spin effects; non-ideal boundary conditions; quantum effects; field-effect transistors
This work discusses the instability of THz plasma waves in field-effect transistors (FETs) with spin and quantum effects under non-ideal boundary conditions. The influence of various factors on the instability of THz plasma waves is investigated, and numerical simulations show that the instability is influenced by the drain capacitance, source capacitance, spin effects, quantum effects, and channel width. This finding provides new insights for efficient THz radiation sources and the development of THz technology.
Terahertz (THz) radiation can be generated due to the instability of THz plasma waves in field-effect transistors (FETs). In this work, we discuss the instability of THz plasma waves in the channel of FETs with spin and quantum effects under non-ideal boundary conditions. We obtain a linear dispersion relation by using the hydrodynamic equation, Maxwell equation and spin equation. The influence of source capacitance, drain capacitance, spin effects, quantum effects and channel width on the instability of THz plasma waves under the non-ideal boundary conditions is investigated in great detail. The results of numerical simulation show that the THz plasma wave is unstable when the drain capacitance is smaller than the source capacitance; the oscillation frequency with asymmetric boundary conditions is smaller than that under non-ideal boundary conditions; the instability gain of THz plasma waves becomes lower under non-ideal boundary conditions. This finding provides a new idea for finding efficient THz radiation sources and opens up a new mechanism for the development of THz technology.
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