☆ 4.4 Article

Improved Performance and Bias Stability of Indium-Tin-Zinc-Oxide Thin-Film Transistors Enabled by an Oxygen-Compensated Capping Layer

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2023)

相关参考文献

注意：仅列出部分参考文献，下载原文获取全部文献信息。

Article Nanoscience & Nanotechnology

Low-Voltage, High-Performance, Indium-Tin-Zinc-Oxide Thin-Film Transistors Based on Dual-Channel and Anodic-Oxide

Jidong Jin et al.

Summary: Low-voltage indium-tin-zinc-oxide (ITZO) thin-film transistors (TFTs) with excellent device performance and bias stability are developed using a dual-channel layer and an anodic-oxide gate dielectric layer. The dual-channel structure enhances device performance and bias stability compared to the single-channel structure. The ITZO TFTs gated with anodic AlxOy exhibit low-voltage operation, high mobility, and good operational stability, making them suitable for low-power, portable, and wearable electronics.

ADVANCED ELECTRONIC MATERIALS (2023)

添加到收藏夹

Article Engineering, Electrical & Electronic

Effect of Humidity on Properties of Aqueous-Processed Tb-Doped Indium Oxide Thin-Film Transistors

Penghui He et al.

Summary: The impact of relative humidity on the electronic performance and bias stability of aqueous-processed Tb-doped indium oxide (Tb:In2O3) thin-film transistors (TFTs) is investigated. The mobility of the TFTs is sensitive to relative humidity. Optimal mobility and low threshold voltage shift are achieved by tuning the relative humidity. Dry and high humid ambience both have negative effects on the performance and stability of the TFTs.

IEEE ELECTRON DEVICE LETTERS (2022)

添加到收藏夹

Article Engineering, Electrical & Electronic

Investigation on Stability in Solution-Processed In-Zn-Sn-O TFT Array Under Various Intensity of Illumination

Bin Jing et al.

Summary: This study investigates the effect of light illumination intensity on the stability of solution processed In-Zn-Sn-O (IZTO) thin-film transistor (TFT) arrays. The results show that light illumination suppresses Vth shift under positive bias illumination stress, but leads to two-stage degradation and the occurrence of a hump phenomenon under negative bias illumination stress. The severity of the hump phenomenon is directly related to the light illumination intensity.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2022)

添加到收藏夹

Article Materials Science, Multidisciplinary

Solid-State Optoelectronic Synapse Transistor Using a LaF3 Gate Dielectric

Peng Shi et al.

Summary: Optoelectronic synaptic devices have high bandwidth and low energy consumption, and can combine multiple functions in one device. A solid-state optoelectronic synaptic transistor using IGZO as the channel and LaF3 as the gate dielectric is designed and fabricated, allowing investigation of synaptic plasticity induced by electric and optical stimuli. With the help of ion-trapping effect and persistent photoconductivity effect, synaptic plasticity can be achieved upon both electrical and light pulse stimuli, and the plasticity induced by light can be modulated by gate voltage.

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2022)

添加到收藏夹

Article Physics, Applied

High-performance a-ITZO TFTs with high bias stability enabled by self-aligned passivation using a-GaOx

Yuhao Shi et al.

Summary: Amorphous gallium oxide can be selectively etched by tetramethyl ammonium hydroxide-containing developers, enabling self-aligned passivation and improving the stability and performance of indium-tin-zinc oxide thin-film transistors.

APPLIED PHYSICS LETTERS (2022)

添加到收藏夹

Article Physics, Applied

Enhanced stability and mobility of solution-processed oxide thin-film transistors with bilayer terbium-incorporated indium oxide channel

Penghui He et al.

Summary: A solution-processed bilayer active channel is designed to improve the stability and mobility of Tb-doped indium oxide (Tb:In2O3) thin-film transistors. The bilayer channel has a large conduction band offset, leading to accumulation of abundant electrons at the interface and significant improvement in mobility. Additionally, the bilayer Tb:In2O3 transistors exhibit good stability under photoinduced stress.

APPLIED PHYSICS LETTERS (2022)

添加到收藏夹

Article Engineering, Electrical & Electronic

Enhancement of the Electrical Performance and Bias Stability of RF-Sputtered Indium Tin Zinc Oxide Thin-Film Transistors with Vertical Stoichiometric Oxygen Control

Jeongho Lee et al.

Summary: This study investigates the performance of indium tin zinc oxide (ITZO) thin-film transistors (TFTs) with different channel structures. The results show that bilayer-channel ITZO TFTs exhibit enhanced electrical performance and bias stress stability compared to single-channel ITZO TFTs. The electrical properties of the bilayer-channel films can be fine-tuned by adjusting their oxygen stoichiometry using an oxygen-compensated capping layer.

ACS APPLIED ELECTRONIC MATERIALS (2022)

添加到收藏夹

Article Engineering, Electrical & Electronic

Effect of Sc2O3 Passivation Layer on the Electrical Characteristics and Stability of InSnZnO Thin-Film Transistors

Wei Zhong et al.

Summary: The study found that ITZO thin-film transistors with a scandium oxide (Sc2O3) passivation layer showed excellent electrical performance and stability, especially under negative bias temperature stress and positive bias temperature stress. In contrast, devices with an aluminum oxide (Al2O3) passivation layer exhibited poorer stability.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)

添加到收藏夹

Review Chemistry, Multidisciplinary

Wide Bandgap Oxide Semiconductors: from Materials Physics to Optoelectronic Devices

Jueli Shi et al.

Summary: Wide bandgap oxide semiconductors are a unique class of materials with properties of electrical conductivity and optical transparency, widely used in optoelectronics. Recent research focuses on understanding the materials physics and designing new high-performing TFT devices based on oxide semiconductors.

ADVANCED MATERIALS (2021)

添加到收藏夹

Article Engineering, Electrical & Electronic

Mobility-stability trade-off in oxide thin-film transistors

Yu-Shien Shiah et al.

Summary: This study successfully fabricated ultrastable thin-film transistors with mobilities of 70 cm(2) (V s)(-1) by understanding the origins of instability in high-mobility amorphous oxide transistors. The research identified the sensitivity of amorphous oxide semiconductors to externally introduced impurities and defects, and explained the mechanism of how carbon-monoxide-related impurities affect the stability of high-mobility indium tin zinc oxide transistors.

NATURE ELECTRONICS (2021)

添加到收藏夹

Article Chemistry, Multidisciplinary

TFT Channel Materials for Display Applications: From Amorphous Silicon to Transition Metal Dichalcogenides

Gi Woong Shim et al.

ADVANCED MATERIALS (2020)

添加到收藏夹

Article Engineering, Electrical & Electronic

Investigation of the anomalous hump phenomenon in amorphous InGaZnO thin-film transistors

Tong Teng et al.

SOLID-STATE ELECTRONICS (2020)

添加到收藏夹

Article Engineering, Electrical & Electronic

Investigation of electrical performance and operation stability of RF-sputtered InSnZnO thin film transistors by oxygen-ambient rapid thermal annealing

Seohyun Maeng et al.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2020)

添加到收藏夹

Article Nanoscience & Nanotechnology

Ultra-wide bandgap amorphous oxide semiconductors for NBIS-free thin-film transistors

Junghwan Kim et al.

APL MATERIALS (2019)

添加到收藏夹

Article Chemistry, Physical

Annealing temperature effects on the structural and electrical properties of N-doped In-Zn-Sn-O thin film transistors

Jinbao Su et al.

JOURNAL OF ALLOYS AND COMPOUNDS (2019)

添加到收藏夹

Article Materials Science, Multidisciplinary

Electronic Defects in Amorphous Oxide Semiconductors: A Review

Keisuke Ide et al.

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2019)

添加到收藏夹

Article Nanoscience & Nanotechnology

Design of InZnSnO Semiconductor Alloys Synthesized by Supercycle Atomic Layer Deposition and Their Rollable Applications

Jiazhen Sheng et al.

ACS APPLIED MATERIALS & INTERFACES (2019)

添加到收藏夹

Article Physics, Applied

Defect-induced instability mechanisms of sputtered amorphous indium tin zinc oxide thin-film transistors

Jinhee Park et al.

JOURNAL OF APPLIED PHYSICS (2018)

添加到收藏夹

Article Engineering, Electrical & Electronic

Extraction of the sub-band gap density of states of Nb doped ZnO thin film transistors using C-V measurements

A. Shaw et al.

MICROELECTRONIC ENGINEERING (2017)

添加到收藏夹

Article Chemistry, Multidisciplinary

Reduction of Bias and Light Instability of Mixed Oxide Thin-Film Transistors

Mallory Mativenga et al.

APPLIED SCIENCES-BASEL (2017)

添加到收藏夹

Article Nanoscience & Nanotechnology

Performance and Stability Enhancement of In-Sn-Zn-O TFTs Using SiO2 Gate Dielectrics Grown by Low Temperature Atomic Layer Deposition

Jiazhen Sheng et al.

ACS APPLIED MATERIALS & INTERFACES (2017)

添加到收藏夹

Article Physics, Applied

Nitrogen anion doping as a strategy to suppress negative gate-bias illumination instability of ZnSnO thin film transistor

Jun Li et al.

APPLIED PHYSICS LETTERS (2016)

添加到收藏夹

Article Engineering, Electrical & Electronic

DC sputtered amorphous In-Sn-Zn-O thin-film transistors: Electrical properties and stability

Mitsuru Nakata et al.

SOLID-STATE ELECTRONICS (2016)

添加到收藏夹

Article Chemistry, Multidisciplinary

Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors

Po-Tsun Liu et al.

RSC ADVANCES (2016)

添加到收藏夹

Article Engineering, Electrical & Electronic

Channel Length-Dependent Charge Detrapping on Threshold Voltage Shift of Amorphous InGaZnO TFTs Under Dynamic Bias Stress

Suehye Park et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2013)

添加到收藏夹

Article Engineering, Electrical & Electronic

Effect of SiO2 and/or SiNx Passivation Layer on Thermal Stability of Self-Aligned Coplanar Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors

Dong Han Kang et al.

JOURNAL OF DISPLAY TECHNOLOGY (2013)

添加到收藏夹

Article Chemistry, Physical

Improvement of the photo-bias stability of the Zn-Sn-O field effect transistors by an ozone treatment

Bong Seob Yang et al.

JOURNAL OF MATERIALS CHEMISTRY (2012)

添加到收藏夹

Article Physics, Applied

Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors

Kwang Hwan Ji et al.

APPLIED PHYSICS LETTERS (2011)

添加到收藏夹

Article Physics, Applied

Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors

Jeong-Min Lee et al.

APPLIED PHYSICS LETTERS (2008)

添加到收藏夹

© Peeref 2019-2024. All rights reserved.