Some physical analysis of quaternary CuNiSbS powder for optoelectronic applications

Novel quaternary CuNiSbS chalcogenide material has been successfully prepared using a simple co-precipitation method using a mixture of solutions of the constituent elements in a chemical formula.The structure and morphological characterizations of the prepared material in powder form wereperformed via x-ray diffraction, a High-resolution transmission electron microscope (HRTEM), and a Scanning electron microscope (SEM). FTIR and diffuse reflectance spectrum of the prepared material were conducted to provide valuable information about the main absorption bands besides the energy optical band gap of the material. ACconductivity and the dielectric properties of the prepared materialusingbroadband dielectricspectroscopy (BDS) besides a magnetic analysis via a vibrating sample magnetometer (VSM) were also investigated.

Automated summary

Novel quaternary CuNiSbS chalcogenide material was prepared using a simple co-precipitation method, and its structure, morphology, infrared absorption, and energy band gap were characterized. The AC conductivity, dielectric properties, and magnetic behavior of the prepared material were also investigated.