期刊
PHYSICA SCRIPTA
卷 98, 期 8, 页码 -出版社
IOP Publishing Ltd
DOI: 10.1088/1402-4896/ace1b5
关键词
transparent conductive oxides (TCOs); organic solar cells (OSCs); aluminum doped zinc oxide (AZO)
This study focuses on the numerical analysis of different transparent conducting oxides (TCOs) perspectives, and confirms the feasibility of using aluminum-doped zinc oxide (AZO) as TCO for organic solar cells (OSCs) due to its extended transparency, antireflection, mechanical flexibility, low-cost processing, and realistic performance. The contributions of each interfacial layer thickness, such as AZO as TCO, P3HT:PC61BM as organic absorbing layer (OAL), Spiro-OMeTAD as hole-transport layer (HTL), and ZnO as electron-transport layer (ETL), to the stability and reproducibility of the design OSC are investigated. The optimization of trap-state densities (N-t) and charge carrier mobility (mu(n,p)) in OAL is also performed to increase the diffusion length of excitons carriers (L-n,L-p) and achieve higher power conversion efficiency (PCE).
The effort emphasizes the numerical analysis of different transparent conducting oxides (TCOs) perspectives, which include ITO, FTO, AZO, and IZO anode-based organic solar cells (OSCs) with the drift-diffusion approach. The prior selection of aluminum-doped zinc oxide (AZO) as TCO is feasible for more extended transparency and antireflection due to a tailored absorption wavelength of <380 nm and the factors of higher mechanical flexibility, low-cost processing, and realistic performance at lower temperatures. To confirm the stability and reproducibility of the design OSC, the contribution of each interfacial layer thickness, i.e., AZO as TCOs, P3HT: PC61BM as an organic absorbing layer (OAL), Spiro-OMeTAD (SOT) as a hole-transport layer (HTL), and ZnO as an electron-transport layer (ETL), is also investigated. Furthermore, functions of optimum trap-state densities (N-t) and charge carrier mobility (mu(n ,p)) in OAL have been performed to aid in increasing the diffusion length of excitons carriers (L-n,L-p). These properties led to better photogeneration and transport of charge carriers, decreasing the series resistance (R-S), leading to lower bimolecular recombination, a long carrier lifetime (tau(n,p)), and consequently higher power conversion efficiency (PCE). The findings revealed that the proposed OSC structure achieves an excellent PCE of 10.28% for AZO as TCO with an 850 nm ultra-thick OAL under AM 1.5 G light irradiation. Hence, a better fabrication process for efficient OSC could also be improved by the optimization of all these critical factors for future research.
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