The influence of manufacturing modes on the electrical and energy parameters of graphene/p-CdTe Schottky diodes

The paper investigated the electrical properties of graphene/p-CdTe structures, which were distinguished by different durations of graphene films application on p-CdTe crystalline substrates: t1 = 5 min, t2 = 10 min and t3 = 15 min. The temperature of the substrates did not exceed TS = 523 K. The formation of graphene layers was confirmed by the study of Raman scattering spectra in the frequency range of 1000-3250 cm-1, in which the G and 2D bands with features characteristic of few-layer graphene appear. The established dependence of the electrical properties of the studied surface-barrier structures of graphene/p-CdTe on the duration of graphene films sputtering is well explained by the thermally stimulated change in the equilibrium characteristics of the base material and the formation of a near-surface layer with an increased concentration of acceptor-type defects (VCd), which is caused by the processes of the substrate components evaporation at its heating.

Automated summary

The paper investigates the electrical properties of graphene/p-CdTe structures utilizing different durations of graphene films application on p-CdTe crystalline substrates. The formation of graphene layers is confirmed by Raman scattering spectra analysis, and the electrical properties depend on the duration of graphene films sputtering due to the thermally stimulated change in the equilibrium characteristics of the base material and the formation of a near-surface layer with an increased concentration of acceptor-type defects.