Characterization of Bi-doped ZnO nanorods prepared by chemical bath deposition method

This study investigates the effect of bismuth (Bi) doping on the structural, optical and electrical properties of ZnO nanorods prepared using a chemical bath deposition process. X-ray diffraction shows that the prepared nanorods are crystalline, and that Bi is successfully incorporated into the ZnO lattice. Scanning electron microscopy reveals an enhancement in the growth-rate upon Bi doping while X-ray photoelectron spectroscopy confirms the presence of Bi2O3 for Bi concentrations & GE; 2 at.%. Room temperature UV and deep-level emission peaks are observed in the as-grown ZnO nanorods. Following annealing at 573 K, in oxygen, only sharp UV luminescence peaks remain. Additinally, a blueshift in the optical band gap is observed following Bi doping. The current-voltage characteristics of the fabricated Schottky diodes show improved rectification behaviour after Bi doping. The best device is obtained at 3 at.% Bi with a Schottky barrier height and an ideality factor of 0.70 eV and 1.86, respectively.

Automated summary

This study investigates the effect of bismuth (Bi) doping on the structural, optical, and electrical properties of ZnO nanorods. Bi is successfully incorporated into the ZnO lattice, enhancing the growth-rate and causing a blueshift in the optical band gap. The fabricated Schottky diodes show improved rectification behavior after Bi doping, with the best device obtained at 3 at.% Bi.