4.6 Article

Al0.1Ga0.9N p-i-n ultraviolet avalanche photodiodes with suppressed surface leakage current and uniform avalanche breakdown

相关参考文献

注意:仅列出部分参考文献,下载原文获取全部文献信息。
Review Materials Science, Multidisciplinary

On the Scope of GaN-Based Avalanche Photodiodes for Various Ultraviolet-Based Applications

Dong Ji et al.

Summary: This review presents an overview of GaN avalanche photodiodes (APDs). GaN-based APDs have gained interest from the device community. The review discusses important aspects of the device, including the design space, substrate choice, edge termination efficacy, and the physics behind avalanche breakdown in GaN. The study also covers reported impact ionization coefficients and their impact on device performance. Various reported GaN APDs are summarized and compared. The conclusion is that hole-initiated GaN APDs on free-standing GaN substrates offer advantages as ultraviolet light detectors, with their ultra-high responsivity and low dark current.

FRONTIERS IN MATERIALS (2022)

Article Engineering, Electrical & Electronic

High Breakdown Voltage and High Current Injection Vertical GaN-on-GaN p-n Diodes With Extremely Low On-Resistance Fabricated on Ammonothermally Grown Bulk GaN Substrates

Andrzej Taube et al.

Summary: We report the fabrication and characterization of high breakdown voltage and high current injection vertical GaN-on-GaN p-n diodes on ammonothermally grown bulk GaN substrates. The active region of the diodes exhibits bright electroluminescence with high intensity near band edge emission and low intensity defect and unintentional impurities-related bands. The fabricated devices show high breakdown voltage, high on/off current ratio, high current density, and extremely low ON-resistance under high current injection.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2022)

Article Multidisciplinary Sciences

Highly efficient blue InGaN nanoscale light-emitting diodes

Mihyang Sheen et al.

Summary: In this study, a blue nanorod LED with high external quantum efficiency (EQE) was demonstrated by reducing the size-dependent efficiency reduction through passivation. This work paves the way for manufacturing self-emissive nanorod LED displays for next-generation display technologies.

NATURE (2022)

Article Engineering, Electrical & Electronic

Selectively patterned Mg-doped GaN by SiNx-driven hydrogen injection

Hyun-Soo Lee et al.

Summary: In this study, a method to achieve selectively patterned Mg-doped GaN layers using hydrogen drive-in through PECVD SiNx films is demonstrated. The method selectively deactivates activated Mg-doped GaN layers through low-temperature annealing and is optically verified through spatially resolved photoluminescence measurements.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2022)

Article Engineering, Electrical & Electronic

Al0.1Ga0.9N p-i-n Ultraviolet Avalanche Photodiodes With Avalanche Gain Over 106

Haifan You et al.

Summary: In this research, Al0.1Ga0.9N p-i-n ultraviolet avalanche photodiodes (APDs) based on sapphire substrates were reported, achieving a record-high gain over 2 x 10(6). The devices fabricated with various mesa diameters demonstrated consistent avalanche behaviors and identical dark current distributions, comparable to GaN APDs grown on free-standing GaN substrates. Quadratic fitting analysis revealed that the leakage current at the breakdown voltage is a mixture of surface and bulk leakage, with the surface component comparable to the bulk. Additionally, KOH surface treatment and SiO2 passivation were proven effective in suppressing the leakage current and achieving robust avalanche performance.

IEEE ELECTRON DEVICE LETTERS (2022)

Article Optics

Progress on photovoltaic AlGaN photodiodes for solar-blind ultraviolet photodetection

Xu Liu et al.

Summary: This paper reviews the progress of photovoltaic AlGaN-based solar-blind ultraviolet photodetectors, focusing on the physical properties of AlGaN, fabrication methods and defect annihilation of the AlN/sapphire template, as well as various types of photovoltaic SBPDs. The promising prospects of photovoltaic AlGaN photodiodes in solar-blind ultraviolet photodetection are highlighted.

CHINESE OPTICS LETTERS (2022)

Article Engineering, Electrical & Electronic

High-Gain and Low-Dark Current GaN p-i-n Ultraviolet Avalanche Photodiodes Grown by MOCVD Fabricated Using Ion-Implantation Isolation

Marzieh Bakhtiary-Noodeh et al.

Summary: The article discusses the growth of front-illuminated GaN-based p-i-n ultraviolet avalanche photodiodes using metalorganic chemical vapor deposition on a free-standing GaN substrate. The study confirms high crystal quality and low surface roughness of the grown structure. Through ion-implantation isolation, sidewall leakage current is reduced, reliability is improved, and devices demonstrate low leakage current density and a maximum gain.

JOURNAL OF ELECTRONIC MATERIALS (2021)

Article Nanoscience & Nanotechnology

Origin of blue luminescence in Mg-doped GaN

Jing Wang et al.

Summary: This study investigates the origin of blue luminescence in Mg-doped GaN by observing dual acceptor-bound exciton peaks through low-temperature photoluminescence and calibrating the energy-level structure. The results confirm the dual-factor origin of the blue luminescence band and show changes in photoluminescence spectrum and p-type conductivity of Mg-doped GaN with annealing temperature. The study also suggests that the blue luminescence band and p-type conductivity may not be directly related in GaN grown by metalorganic chemical vapor deposition.

AIP ADVANCES (2021)

Review Optics

Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays

Qing Cai et al.

Summary: This paper comprehensively reviews the progress on AlGaN-based solar-blind UV PDs and FPAs, including basic physical properties of AlGaN, epitaxy and p-type doping issues, various types of PDs and the analysis of physical mechanisms for performance improvement. Recent advancements in imaging technologies used with AlGaN FPAs in recent years are also summarized.

LIGHT-SCIENCE & APPLICATIONS (2021)

Article Engineering, Electrical & Electronic

Effective Leakage Current Reduction in GaN Ultraviolet Avalanche Photodiodes With an Ion-Implantation Isolation Method

Minkyu Cho et al.

Summary: This study reports high-performance homojunction GaN avalanche photodiodes grown on a low-defect GaN substrate and fabricated with an ion-implantation isolation method. The fabricated GaN APDs showed ultralow dark current density and high photocurrent gain under deep-ultraviolet illumination. Temperature-dependent study indicated a trap-assisted tunneling process predominates the leakage current near the avalanching breakdown.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)

Review Materials Science, Multidisciplinary

Current Status of Carbon-Related Defect Luminescence in GaN

Friederike Zimmermann et al.

Summary: The impact of carbon doping on the optical and electrical properties of GaN has been widely debated, and researchers have used experimental techniques such as photoluminescence to study the role of related defects. Recent advances in attributing carbon-related photoluminescence bands have been made possible through the interplay of refined growth and characterization techniques with state-of-the-art first-principles calculations. Comparisons between predicted electronic structures of carbon defects and experimental results have helped provide a comprehensive overview of the interpretation of carbon-related broad luminescence bands in bulk GaN.

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2021)

Article Engineering, Electrical & Electronic

Highly Enhanced Inductive Current Sustaining Capability and Avalanche Ruggedness in GaN p-i-n Diodes With Shallow Bevel Termination

Kai-Wen Nie et al.

IEEE ELECTRON DEVICE LETTERS (2020)

Article Engineering, Electrical & Electronic

Uniform and High Gain GaN p-i-n Ultraviolet APDs Enabled by Beveled-Mesa Edge Termination

Wangping Wang

IEEE PHOTONICS TECHNOLOGY LETTERS (2020)

Article Engineering, Electrical & Electronic

Design and Fabrication of GaN p-n Junction Diodes With Negative Beveled-Mesa Termination

Takuya Maeda et al.

IEEE ELECTRON DEVICE LETTERS (2019)

Article Engineering, Electrical & Electronic

Vertical Ga2O3 Schottky Barrier Diodes With Small-Angle Beveled Field Plates: A Baliga's Figure-of-Merit of 0.6 GW/cm2

Noah Allen et al.

IEEE ELECTRON DEVICE LETTERS (2019)

Article Physics, Applied

Origin of Blue Luminescence in Mg-Doped GaN

Sanjay Nayak et al.

PHYSICAL REVIEW APPLIED (2019)

Article Engineering, Electrical & Electronic

High-Voltage and High-ION/IOFF Vertical GaN-on-GaN Schottky Barrier Diode With Nitridation-Based Termination

Shaowen Han et al.

IEEE ELECTRON DEVICE LETTERS (2018)

Article Engineering, Electrical & Electronic

p-i-p-i-n Separate Absorption and Multiplication Ultraviolet Avalanche Photodiodes

Mi-Hee Ji et al.

IEEE PHOTONICS TECHNOLOGY LETTERS (2018)

Article Engineering, Electrical & Electronic

Observation and discussion of avalanche electroluminescence in GaN p-n diodes offering a breakdown electric field of 3MVcm-1

S. Mandal et al.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2018)

Article Physics, Applied

AlGaN ultraviolet Avalanche photodiodes based on a triple-mesa structure

Q. Cai et al.

APPLIED PHYSICS LETTERS (2018)

Article Engineering, Electrical & Electronic

High-Voltage Vertical GaN p-n Diodes by Epitaxial Liftoff From Bulk GaN Substrates

Jingshan Wang et al.

IEEE ELECTRON DEVICE LETTERS (2018)

Article Physics, Multidisciplinary

A simulation study of field plate termination in Ga2O3 Schottky barrier diodes

Hui Wang et al.

CHINESE PHYSICS B (2018)

Article Engineering, Electrical & Electronic

Uniform and Reliable GaN p-i-n Ultraviolet Avalanche Photodiode Arrays

Mi-Hee Ji et al.

IEEE PHOTONICS TECHNOLOGY LETTERS (2016)

Article Computer Science, Information Systems

High-k Dielectric Passivation for GaN Diode with a Field Plate Termination

Michitaka Yoshino et al.

ELECTRONICS (2016)

Article Engineering, Electrical & Electronic

AlxGa1-xN Ultraviolet Avalanche Photodiodes With Avalanche Gain Greater Than 105

Jeomoh Kim et al.

IEEE PHOTONICS TECHNOLOGY LETTERS (2015)

Article Engineering, Electrical & Electronic

GaN MIS-HEMTs With Nitrogen Passivation for Power Device Applications

Shih-Chien Liu et al.

IEEE ELECTRON DEVICE LETTERS (2014)

Article Engineering, Electrical & Electronic

Field-plate design for edge termination in silicon carbide high-power Schottky diodes

S. Noor Mohammad et al.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2011)

Article Physics, Applied

Carbon impurities and the yellow luminescence in GaN

J. L. Lyons et al.

APPLIED PHYSICS LETTERS (2010)

Article Physics, Applied

Time-resolved study of yellow and blue luminescence in Si- and Mg-doped GaN

YH Kwon et al.

APPLIED PHYSICS LETTERS (2000)