Near-infrared tunable Tamm plasmons high-performance hot electron photodetector based on Ag/Ge2Sb2Te5 low Schottky barrier

Hot electron photodetector is a typical hot electron optoelectronic device, which can realize the narrow band photoelectric detection with high tunability and sensitivity. The Tamm plasmons (TPs) based on the planar metal film/distributed Bragg reflector (DBR) has the advantages of simple structure, low manufacturing cost, and high absorption efficiency. A multilayer thin film device structure for high-performance near-infrared hot electron metal-semiconductor-metal photodetectors is proposed. The structure is based on Ag/Ge2Sb2Te5 (GST) Schottky barrier and TPs formed by SiO2/MoS2 DBR. The simulation results of hot electron emission theory show that DBR can effectively extend the absorption spectrum of Ag film and the response spectrum of the device, and enhance the absorption rate of Ag film and the response of the device. The responsivity which is up to 53 mA/W can be obtained by adjusting the structure parameters of the DBR, the thickness of the Ag film, and the GST layer. At the same time, we also propose a digital display system based on the arrangement of crystalline GST and amorphous GST. It provides a new way for the realization of high-performance near-infrared hot electronic devices and is conducive to expanding the application field of hot electronic photodetectors.

Automated summary

A multilayer thin film device structure based on Tamm plasmons is proposed for high-performance near-infrared hot electron photodetectors. By optimizing the device structure parameters, high responsivity detection can be achieved.