Ag nanoparticle assisted vertically aligned β-Ga2O3 nanowire deposited by GLAD technique for ultrafast photodetection

In this study, we report the fabrication of Silver (Ag) nanoparticle (NP) assisted vertically oriented beta-Ga2O3 nanowires on Silicon (Si) - substrate by the Glancing angle deposition (GLAD) technique. The fabricated samples were annealed at 900 degrees C. The optoelectronic properties of both As-deposited and annealed devices are studied thoroughly. The sample shows an increase in average crystallite size upon annealing with a decrease in lattice strain and dislocation density. FEG-SEM image confirms the growth of well-aligned vertically oriented nanowires with Ag NP in the midway of each nanowire. The UV-Vis absorption spectra show that Ag NP's presence results in the appearance of a significant absorption hump in the visible range, thereby broadening the light absorption capability of beta-Ga2O3. The improvement in crystalline quality and reduction in defects after annealing resulted in a better response for the annealed device. These results indicate that annealing the Ag NP-assisted beta-Ga2O3 NW device could become a feasible option for high-speed photodetectors, as it demonstrates a faster photoresponse time and a lower turn-on voltage.

Automated summary

This study reports the fabrication of silver nanoparticle-assisted vertically oriented beta-Ga2O3 nanowires using the glancing angle deposition technique. The optoelectronic properties of both as-deposited and annealed devices were studied, showing an improvement in crystalline quality and a reduction in defects after annealing. The presence of silver nanoparticles resulted in enhanced visible light absorption, indicating the potential of the annealed device for high-speed photodetectors.