期刊
OPTICAL MATERIALS
卷 142, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.optmat.2023.113975
关键词
Photodiodes; ZnO/CuO heterostructure; RF-Sputtering; Self-powered; Semiconductors
We fabricated ZnO/CuO heterostructure photodiodes on FTO substrate using the RF-sputtering method and studied the effect of ZnO thickness on their photoresponse. Various characterizations were performed, and it was found that both samples showed potential for photovoltaic properties, with the sample with a thinner ZnO layer exhibiting the highest photoresponse ratio and fast response time.
In this study, we have fabricated ZnO/CuO heterostructure photodiodes on FTO substrate using the RF-sputtering method and investigated the influence of the ZnO thickness (390 and 470 nm) on their photoresponse in the wide range of UV to red wavelengths. The layers were characterized by FESEM, XRD, Raman, PL, and UV-Vis. Spectra, also I-V, I-V-T (295-340 K), and I-t in the dark and under illumination. We found: (1) the constituent layers have a polycrystalline nature, monoclinic phases for CuO and wurtzite phase for ZnO layers; (2) in addition to rectifying behavior, the I-V-T analysis confirmed that the current mechanism of these junctions follows the recombination model; (3) both samples have the potential of photovoltaic properties with self-powered ability; (4) sample with thinner ZnO layer has the highest photoresponse ratio (ILight/IDark) of 5.5 x 104-2.6 x 103 through UV to red light illumination and fast response time of 45-50 ms.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据