期刊
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ELSEVIER
DOI: 10.1016/j.nima.2023.168363
关键词
CdZnTe; CdZnTeSe; 1.1-eV trap; Selenium doping; Hole lifetime; Cu-migrated patterns; EPD; Carrier drift time measurement
An improved performance of detectors with 2% selenium-added CdZnTe(CZT) was observed due to a reduced concentration of a deep-level hole trap. Photoluminescence measurements confirmed the reduced trap concentration. The prolonged lifetime of hole carriers in selenium-containing CZTS material was attributed to the disappearance of hole trapping at a specific binding energy.
An improved detector performance for 2% selenium-added CdZnTe(CZT) was observed and explained by the reduced concentration of a deep-level hole trap, which was confirmed by photoluminescence measurements of CdZnTeSe(CZTS) and CdTeSe(CTS). The hole lifetime in CZTS was found to be 2.18 & mu;s in the selenium-containing material, which is much longer than that typically measured by 10-100 times. The prolonged lifetime of hole carriers is likely caused by the disappearance of hole trapping at a specific binding energy of 1.1-eV below the conduction band. Also, the enhanced pulse height spectra of CZTS gamma-ray detectors were explained in terms of the ratio of electron and hole mobility-lifetime products. Cu-migrated patterns are used for the first time to reveal sub-grains and their networks in CZT and CZTS. Based on qualitative analysis, the Cu-migrated patterns in CZT and CZTS showed similar results.
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