期刊
NEW JOURNAL OF PHYSICS
卷 25, 期 10, 页码 -出版社
IOP Publishing Ltd
DOI: 10.1088/1367-2630/acfba5
关键词
error correction; repetition code; phase-flip code; break-even point
In this theoretical study, we investigate the use of quantum code-based memories to enhance the lifetime of qubits and demonstrate the effectiveness of the quantum phase-flip repetition code as a quantum memory. By considering the gate error probabilities of current quantum computing platforms, we determine the optimal repetition number of quantum error correction cycles required to reach the break-even point and provide guidelines for developing quantum memories in semiconductor quantum devices.
In this theoretical study, we explore the use of quantum code-based memories to enhance the lifetime of qubits and exceed the break-even point, which is critical for the implementation of fault-tolerant quantum computing. Specifically, we investigate the quantum phase-flip repetition code as a quantum memory and theoretically demonstrate that it can preserve arbitrary quantum information longer than the lifetime of a single idle qubit in a dephasing-time-limited system, e.g. in semiconductor qubits. Our circuit-based analytical calculations show the efficiency of the phase-flip code as a quantum memory in the presence of relaxation, dephasing, and faulty quantum gates. Moreover, we identify the optimal repetition number of quantum error correction cycles required to reach the break-even point by considering the gate error probabilities of current platforms for quantum computing. Our results provide guidelines for developing quantum memories in semiconductor quantum devices.
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