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T. Auzelle et al.
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Molecular beam homoepitaxy of N-polar AlN on bulk AlN substrates
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Shallow donor and DX state in Si doped AlN nanowires grown by molecular beam epitaxy
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Role of oxygen diffusion in the dislocation reduction of epitaxial AlN on sapphire during high-temperature annealing
Leonardo Cancellara et al.
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Structural and optical properties of self-assembled AlN nanowires grown on SiO2/Si substrates by molecular beam epitaxy
Z. Gacevic et al.
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Enhanced Radiative Efficiency in GaN Nanowires Grown on Sputtered TiNx: Effects of Surface Electric Fields
Thomas Auzelle et al.
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Nanoscale and quantum engineering of III-nitride heterostructures for high efficiency UV-C and far UV-C optoelectronics
Xianhe Liu et al.
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Light extraction efficiency of AlGaN nanowire deep ultraviolet light-emitting diodes on Si with different photonic structures
Jiaying Lu et al.
JOURNAL OF NANOPHOTONICS (2021)
Toward Quantitative Measurements of Piezoelectricity in III-N Semiconductor Nanowires
L. Jaloustre et al.
ACS APPLIED NANO MATERIALS (2021)
Self-Assembly of Well-Separated AlN Nanowires Directly on Sputtered Metallic TiN Films
Mani Azadmand et al.
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Investigation of strain and stoichiometry of epitaxial titanium nitride on sapphire
H. A. Smith et al.
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Songrui Zhao et al.
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Kevin Lee et al.
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Decomposition Resilience of GaN Nanowires, Crested and Surficially Passivated by AlN
Swagata Bhunia et al.
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Alexandra-Madalina Siladie et al.
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Highly Plasmonic Titanium Nitride by Room-Temperature Sputtering
Chun-Chieh Chang et al.
SCIENTIFIC REPORTS (2019)
57Fe Mossbauer study of epitaxial TiN thin film grown on MgO (100) by magnetron sputtering
B. Qi et al.
APPLIED SURFACE SCIENCE (2019)
Self-assembled formation of long, thin, and uncoalesced GaN nanowires on crystalline TiN films
David van Treeck et al.
NANO RESEARCH (2018)
High-quality TiN/AlN thin film heterostructures on c-sapphire
A. Moatti et al.
ACTA MATERIALIA (2018)
Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy
Xu Yang et al.
APPLIED PHYSICS EXPRESS (2018)
Monitoring the formation of GaN nanowires in molecular beam epitaxy by polarization-resolved optical reflectometry
Pierre Corfdir et al.
CRYSTENGCOMM (2018)
Graded-Index Separate Confinement Heterostructure AlGaN Nanowires: Toward Ultraviolet Laser Diodes Implementation
Haiding Sun et al.
ACS PHOTONICS (2018)
Deep UV Emission from Highly Ordered AIGaN/AIN Core-Shell Nanorods
Pierre-Marie Coulon et al.
ACS APPLIED MATERIALS & INTERFACES (2018)
Intentional polarity conversion of AlN epitaxial layers by oxygen
N. Stolyarchuk et al.
SCIENTIFIC REPORTS (2018)
Impact of sapphire nitridation on formation of Al-polar inversion domains in N-polar AlN epitaxial layers
N. Stolyarchuk et al.
JOURNAL OF APPLIED PHYSICS (2017)
Manipulating the Band Bending of InGaN/GaN Quantum Dots in Nanowires by Surface Passivation
Z. L. Wang et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2017)
Selective area epitaxy of AlGaN nanowire arrays across nearly the entire compositional range for deep ultraviolet photonics
Xianhe Liu et al.
OPTICS EXPRESS (2017)
Temperature-dependent optical properties of titanium nitride
Justin A. Briggs et al.
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Analysis of Incubation Times for the Self-Induced Formation of GaN Nanowires: Influence of the Substrate on the Nucleation Mechanism
M. Sobanska et al.
CRYSTAL GROWTH & DESIGN (2016)
Overview of band-edge and defect related luminescence in aluminum nitride
Tristan Koppe et al.
JOURNAL OF LUMINESCENCE (2016)
Nucleation, Growth, and Bundling of GaN Nanowires in Molecular Beam Epitaxy: Disentangling the Origin of Nanowire Coalescence
Vladimir M. Kaganer et al.
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Titanium induced polarity inversion in ordered (In,Ga)N/GaN nanocolumns
X. Kong et al.
NANOTECHNOLOGY (2016)
Flexible White Light Emitting Diodes Based on Nitride Nanowires and Nanophosphors
Nan Guan et al.
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Stefan Mohn et al.
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Characterization of SiNx/AlN passivation stack with epitaxial AlN grown on AlGaN/GaN heterojunctions by plasma-enhanced atomic layer deposition
Yunyou Lu et al.
APPLIED PHYSICS EXPRESS (2015)
Tunnel junction enhanced nanowire ultraviolet light emitting diodes
A. T. M. Golam Sarwar et al.
APPLIED PHYSICS LETTERS (2015)
High-Temperature Growth of GaN Nanowires by Molecular Beam Epitaxy: Toward the Material Quality of Bulk GaN
Johannes K. Zettler et al.
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Thermal stability of epitaxial cubic-TiN/(Al,Sc)N metal/semiconductor superlattices
Jeremy L. Schroeder et al.
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Si Donor Incorporation in GaN Nanowires
Zhihua Fang et al.
NANO LETTERS (2015)
MBE Growth of AlN Nanowires on Si Substrates by Aluminizing Nucleation
Yanxiong E et al.
NANOSCALE RESEARCH LETTERS (2015)
Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process
J. K. Zettler et al.
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Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources
S. Zhao et al.
SCIENTIFIC REPORTS (2015)
MBE Growth of AlN Nanowires on Si Substrates by Aluminizing Nucleation
Yanxiong E et al.
NANOSCALE RESEARCH LETTERS (2015)
Origins of optical absorption and emission lines in AlN
Qimin Yan et al.
APPLIED PHYSICS LETTERS (2014)
Deep ultraviolet emitting polarization induced nanowire light emitting diodes with AlxGa1-xN active regions
Thomas F. Kent et al.
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Hybrid functional calculations of DX centers in AlN and GaN
L. Gordon et al.
PHYSICAL REVIEW B (2014)
Height self-equilibration during the growth of dense nanowire ensembles: Order emerging from disorder
K. K. Sabelfeld et al.
APPLIED PHYSICS LETTERS (2013)
Vacancy compensation and related donor-acceptor pair recombination in bulk AlN
Benjamin E. Gaddy et al.
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Mixed Polarity in Polarization-Induced p-n Junction Nanowire Light-Emitting Diodes
Santino D. Carnevale et al.
NANO LETTERS (2013)
Self-induced growth of GaN nanowires by molecular beam epitaxy: A critical review of the formation mechanisms
V. Consonni
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Microscopic origin of n-type behavior in Si-doped AlN
Daniel Fernandez Hevia et al.
PHYSICAL REVIEW B (2013)
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Sergio Fernandez-Garrido et al.
NANO LETTERS (2012)
Environment-dependent nanomorphology of TiN: the influence of surface vacancies
Taehun Lee et al.
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Quantitative description for the growth rate of self-induced GaN nanowires
V. Consonni et al.
PHYSICAL REVIEW B (2012)
Physical origin of the incubation time of self-induced GaN nanowires
V. Consonni et al.
APPLIED PHYSICS LETTERS (2011)
Analytical Study of Elastic Relaxation and Plastic Deformation in Nanostructures on Lattice Mismatched Substrates
Xu Zhang et al.
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Threading defect elimination in GaN nanowires
Stephen D. Hersee et al.
JOURNAL OF MATERIALS RESEARCH (2011)
Morphology of self-catalyzed GaN nanowires and chronology of their formation by molecular beam epitaxy
E. Galopin et al.
NANOTECHNOLOGY (2011)
Formation of epitaxial domains: Unified theory and survey of experimental results
Marius Grundmann
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2011)
Molecular beam epitaxy growth and optical properties of AlN nanowires
O. Landre et al.
APPLIED PHYSICS LETTERS (2010)
Identification of III-N nanowire growth kinetics via a marker technique
R. Songmuang et al.
NANOTECHNOLOGY (2010)
Enhancement of Piezoelectric Response in Scandium Aluminum Nitride Alloy Thin Films Prepared by Dual Reactive Cosputtering
Morito Akiyama et al.
ADVANCED MATERIALS (2009)
A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111)
S. Fernandez-Garrido et al.
JOURNAL OF APPLIED PHYSICS (2009)
Density functional theoretical study of surface structure and adatom kinetics for wurtzite AlN
Vibhu Jindal et al.
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Low-pressure HVPE growth of crack-free thick AlN on a trench-patterned AlN template
Yusuke Katagiri et al.
JOURNAL OF CRYSTAL GROWTH (2009)
A complementary geometric model for the growth of GaN nanocolumns prepared by plasma-assisted molecular beam epitaxy
C. T. Foxon et al.
JOURNAL OF CRYSTAL GROWTH (2009)
Role of nonlinear effects in nanowire growth and crystal phase
V. G. Dubrovskii et al.
PHYSICAL REVIEW B (2009)
Role of N defects on thermally induced atomic-scale structural changes in transition-metal nitrides
L. Tsetseris et al.
PHYSICAL REVIEW LETTERS (2007)
Mechanism of molecular beam epitaxy growth of GaN nanowires on Si(111)
R. K. Debnath et al.
APPLIED PHYSICS LETTERS (2007)
Piezoelectric nanogenerators based on zinc oxide nanowire arrays
ZL Wang et al.
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Theoretical investigation of native defects, impurities, and complexes in aluminum nitride
C Stampfl et al.
PHYSICAL REVIEW B (2002)
Experimental determination of the rates of decomposition and cation desorption from AlN surfaces
ZY Fan et al.
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY (2001)
A giant atomic slide-puzzle - Atoms crammed tightly together in metal crystal surfaces are surprisingly mobile.
R van Gastel et al.
NATURE (2000)
Reduction mechanisms for defect densities in GaN using one- or two-step epitaxial lateral overgrowth methods
P Vennéguès et al.
JOURNAL OF APPLIED PHYSICS (2000)
Thermal stability of nitride thin films
L Hultman
VACUUM (2000)
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