相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Influence of the source arrangement on shell growth around GaN nanowires in molecular beam epitaxy
D. van Treeck et al.
PHYSICAL REVIEW MATERIALS (2020)
Electroluminescence and current-voltage measurements of single-(In,Ga)N/GaN-nanowire light-emitting diodes in a nanowire ensemble
David van Treeck et al.
BEILSTEIN JOURNAL OF NANOTECHNOLOGY (2019)
Synthesis and Applications of III-V Nanowires
Enrique Barrigon et al.
CHEMICAL REVIEWS (2019)
Self-assembled formation of long, thin, and uncoalesced GaN nanowires on crystalline TiN films
David van Treeck et al.
NANO RESEARCH (2018)
Green Electroluminescence from Radial m-Plane InGaN Quantum Wells Grown on GaN Wire Sidewalls by Metal-Organic Vapor Phase Epitaxy
Akanksha Kapoor et al.
ACS PHOTONICS (2018)
Evolution of the m-Plane Quantum Well Morphology and Composition within a GaN/InGaN Core-Shell Structure
Pierre-Marie Coulon et al.
CRYSTAL GROWTH & DESIGN (2017)
Growth mechanism of InGaN nanoumbrellas
Xin Zhang et al.
NANOTECHNOLOGY (2016)
Phosphor-converted white light from blue-emitting InGaN microrod LEDs
Tilman Schimpke et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2016)
Demonstration of (In, Ga)N/GaN Core-Shell Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy on Ordered MOVPE GaN Pillars
Steven Albert et al.
CRYSTAL GROWTH & DESIGN (2015)
High-Speed GaN/GaInN Nanowire Array Light-Emitting Diode on Silicon(111)
Robert Koester et al.
NANO LETTERS (2015)
25th Anniversary Article: Semiconductor Nanowires Synthesis, Characterization, and Applications
Neil P. Dasgupta et al.
ADVANCED MATERIALS (2014)
Growth of InGaN/GaN core-shell structures on selectively etched GaN rods by molecular beam epitaxy
S. Albert et al.
JOURNAL OF CRYSTAL GROWTH (2014)
Understanding and controlling indium incorporation and surface segregation on InxGa1-xN surfaces: An ab initio approach
Andrew Ian Duff et al.
PHYSICAL REVIEW B (2014)
III-V nanowire photovoltaics: Review of design for high efficiency
R. R. LaPierre et al.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2013)
Group III nitride core-shell nano- and microrods for optoelectronic applications
Martin Mandl et al.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2013)
A review of MBE grown 0D, 1D and 2D quantum structures in a nanowire
Maria de la Mata et al.
JOURNAL OF MATERIALS CHEMISTRY C (2013)
NH3-rich growth of InGaN and InGaN/GaN superlattices by NH3-based molecular beam epitaxy
J. R. Lang et al.
JOURNAL OF CRYSTAL GROWTH (2012)
Current path in light emitting diodes based on nanowire ensembles
F. Limbach et al.
NANOTECHNOLOGY (2012)
Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells
Tim Wernicke et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2012)
Analyzing the growth of InxGa1-xN/GaN superlattices in self-induced GaN nanowires by x-ray diffraction
M. Woelz et al.
APPLIED PHYSICS LETTERS (2011)
Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy
M. Siekacz et al.
JOURNAL OF APPLIED PHYSICS (2011)
Optical properties of wurtzite/zinc-blende heterostructures in GaN nanowires
G. Jacopin et al.
JOURNAL OF APPLIED PHYSICS (2011)
Submicrometre resolved optical characterization of green nanowire-based light emitting diodes
A-L Bavencove et al.
NANOTECHNOLOGY (2011)
Full-color InGaN/GaN dot-in-a-wire light emitting diodes on silicon
Hieu Pham Trung Nguyen et al.
NANOTECHNOLOGY (2011)
Coexistence of quantum-confined Stark effect and localized states in an (In,Ga)N/GaN nanowire heterostructure
Jonas Laehnemann et al.
PHYSICAL REVIEW B (2011)
Growth model for plasma-assisted molecular beam epitaxy of N-polar and Ga-polar InxGa1-xN
Digbijoy N. Nath et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2011)
Optical spectroscopy of cubic GaN in nanowires
J. Renard et al.
APPLIED PHYSICS LETTERS (2010)
Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy
Wei Guo et al.
NANO LETTERS (2010)
Multicolour luminescence from InGaN quantum wells grown over GaN nanowire arrays by molecular-beam epitaxy
R. Armitage et al.
NANOTECHNOLOGY (2010)
GaN-based nanowires: From nanometric-scale characterization to light emitting diodes
A. -L. Bavencove et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2010)
Large anisotropic adatom kinetics on nonpolar GaN surfaces: Consequences for surface morphologies and nanowire growth
Liverios Lymperakis et al.
PHYSICAL REVIEW B (2009)
Plasma-assisted molecular beam epitaxy growth of GaN nanowires using indium-enhanced diffusion
O. Landre et al.
APPLIED PHYSICS LETTERS (2008)
Dielectric function and van hove singularities for in-rich InxGa1-xN alloys:: Comparison of n- and metal-face materials
P. Schley et al.
PHYSICAL REVIEW B (2007)
Indium-related novel architecture of GaN nanorod grown by molecular beam epitaxy
YH Kim et al.
CHEMICAL PHYSICS LETTERS (2005)
Two-loop relations for heavy-quark parameters in the shape-function scheme
M Neubert
PHYSICS LETTERS B (2005)
Nonpolar InxGa1-xN/GaN(1(1)over-bar-00) multiple quantum wells grown on γ-LiAlO2(100) by plasma-assisted molecular-beam epitaxy -: art. no. 041306
YJ Sun et al.
PHYSICAL REVIEW B (2003)
Incorporation kinetics of indium and gallium in indium gallium nitride: A phenomenological model
DF Storm
JOURNAL OF APPLIED PHYSICS (2001)