High-Pressure Synthesis of Single-Crystalline SnS Nanoribbons

Two-dimensional tin monosulfide (SnS) is attractive forthe developmentof electronic and optoelectronic devices with anisotropic characteristics.However, its shape-controlled synthesis with an atomic thickness andhigh quality remains challenging. Here, we show that highly crystallineSnS nanoribbons can be produced via high-pressure (0.5 GPa) and thermaltreatment (400 & DEG;C). These SnS nanoribbons have a length of severaltens of micrometers and a thickness down to 5.8 nm, giving an averageaspect ratio of & SIM;30.6. The crystal orientation along the zigzagdirection and the in-plane structural anisotropy of the SnS nanoribbonsare identified by transmission electron microscopy and polarized Ramanspectroscopy, respectively. An ionic liquid-gated field-effect transistorfabricated using the SnS nanoribbon exhibits an on/off current ratioof >10(3) and a field-effect mobility of & SIM;0.7 cm(2) V-1 s(-1). This work providesa unique way to achieve one-dimensional growth of SnS.

Automated summary

High-quality SnS nanoribbons with an atomic thickness and anisotropic characteristics can be synthesized through high-pressure and thermal treatment methods. These nanoribbons have a length of several tens of micrometers and a thickness as low as 5.8 nm. They exhibit crystal orientation along the zigzag direction and in-plane structural anisotropy. A field-effect transistor fabricated with these nanoribbons shows high on/off current ratio and field-effect mobility.