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NANO LETTERS
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AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.3c02073
关键词
bilayer graphene; gated quantum dot; atomistictight-binding model; configuration interaction approach; phase diagram
We predict the existence of spontaneous spin and valley symmetry-broken states in a gated bilayer graphene quantum dot. By exact diagonalization of the many-body Hamiltonian, we find that the electron system undergoes phase transitions with increasing spin and valley polarizations as the Coulomb interaction strength increases. A phase diagram for N = 1-6 electrons is mapped out as a function of the Coulomb interaction strength.
We predict the existence of spontaneous spin and valleysymmetry-brokenstates of interacting massive Dirac Fermions in a gated bilayer graphenequantum dot based on the exact diagonalization of the many-body Hamiltonian.The dot is defined by a vertical electric field and lateral gates,and its single-particle (SP) energies, wave functions, and Coulombmatrix elements are computed by using the atomistic tight-bindingmodel. The effect of the Coulomb interaction is measured by the ratioof Coulomb elements to the SP level spacing. As we increase the interactionstrength, we find the electrons in a series of spin and valley symmetry-brokenphases with increasing valley and spin polarizations. The phase transitionsresult from the competition of the SP, exchange, and correlation energyscales. A phase diagram for N = 1-6 electronsis mapped out as a function of the Coulomb interaction strength.
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