期刊
NANO LETTERS
卷 23, 期 21, 页码 9740-9747出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.3c02308
关键词
single photon emission; two-dimensional materials; gallium selenide; strainengineering; Fermilevel; electrostatic doping
The effect of Coulomb interactions on the brightness, single photon purity, and operating temperatures of strain-localized GaSe single-photon emitters (SPEs) was investigated. Electrostatic doping was used to suppress nonradiative recombination, leading to improved emission intensity, single photon purity, and increased operating temperature.
Exciton localization through nanoscale strain has been used to create highly efficient single-photon emitters (SPEs) in 2D materials. However, the strong Coulomb interactions between excitons can lead to nonradiative recombination through exciton-exciton annihilation, negatively impacting SPE performance. Here, we investigate the effect of Coulomb interactions on the brightness, single photon purity, and operating temperatures of strain-localized GaSe SPEs by using electrostatic doping. By gating GaSe to the charge neutrality point, the exciton-exciton annihilation nonradiative pathway is suppressed, leading to similar to 60% improvement of emission intensity and an enhancement of the single photon purity g (2)(0) from 0.55 to 0.28. The operating temperature also increased from 4.5 K to 85 K consequently. This research provides insight into many-body interactions in excitons confined by nanoscale strain and lays the groundwork for the optimization of SPEs for optoelectronics and quantum photonics.
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