Comphy v3.0-A compact-physics framework for modeling charge trapping related reliability phenomena in MOS devices

Charge trapping plays an important role for the reliability of electronic devices and manifests itself in various phenomena like bias temperature instability (BTI), random telegraph noise (RTN), hysteresis or trap-assisted tunneling (TAT). In this work we present Comphy v3.0, an open source physical framework for modeling these effects in a unified fashion using nonradiative multiphonon theory on a one-dimensional device geometry. Here we give an overview about the underlying theory, discuss newly introduced features compared to the original Comphy framework and also review recent advances in reliability physics enabled by these new features. The usefulness of Comphy v3.0 for the reliability community is highlighted by several practical examples including automatic extraction of defect distributions, modeling of TAT in high-kappa capacitors and BTI/RTN modeling at cryogenic temperatures.

Automated summary

Charge trapping is crucial for the reliability of electronic devices and can be observed in phenomena such as bias temperature instability (BTI), random telegraph noise (RTN), hysteresis, and trap-assisted tunneling (TAT). This study introduces Comphy v3.0, an open source physical framework that models these effects in a unified manner using nonradiative multiphonon theory on a one-dimensional device geometry. The paper provides an overview of the underlying theory, discusses new features in comparison to the original Comphy framework, and reviews recent advances in reliability physics enabled by these new features. Several practical examples, including defect distribution extraction, TAT modeling in high-kappa capacitors, and BTI/RTN modeling at cryogenic temperatures, highlight the usefulness of Comphy v3.0 for the reliability community.