Total ionizing dose effect of bulk and SOI P-FinFET with linear workfunction modulation technology

The effect total ionizing dose on a linear gate workfunction modulated SOI P-FinFET is analyzed and compared with the bulk P-FinFET. This technique improves the device electrostatic integrity for pre and post radiation condition. A decade improvement in IOFF is obtained for both the bulk and proposed devices. Moreover, both the SOI devices offer 35% and 29% less subthreshold swing for pre-rad condition. After irradiation trap charges are accumulated in oxide and semiconductor/insulator interfaces, which makes threshold more negative. The linear gate workfunction modulation gives more Vth for both devices. At high radiation of 2000 krad dose proposed SOI device shows 39% more threshold voltage as compared to LGWM bulk P-FinFET. The maximum Vth shift is observed in single workfunction bulk P-FinFET. Based on the simulation results, the proposed SOI P-FinFET is proved to be better TID tolerant and reliable.

Automated summary

This paper analyzes the effect of total ionizing dose on a linear gate workfunction modulated SOI P-FinFET and compares it with the bulk P-FinFET. The technique improves the device's electrostatic integrity for pre and post radiation conditions. Both the bulk and proposed devices show a decade improvement in IOFF. Moreover, the SOI devices exhibit 35% and 29% less subthreshold swing for pre-rad condition. After irradiation, trap charges accumulate in oxide and semiconductor/insulator interfaces, resulting in a more negative threshold voltage. The linear gate workfunction modulation increases the Vth for both devices. At a high radiation dose of 2000 krad, the proposed SOI device shows a 39% higher threshold voltage compared to the LGWM bulk P-FinFET. The maximum Vth shift is observed in the single workfunction bulk P-FinFET. Based on the simulation results, the proposed SOI P-FinFET is proven to be better TID tolerant and reliable.