期刊
MICROELECTRONICS JOURNAL
卷 137, 期 -, 页码 -出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.mejo.2023.105822
关键词
Radiation; FinFET; TID; Workfunction
This paper analyzes the effect of total ionizing dose on a linear gate workfunction modulated SOI P-FinFET and compares it with the bulk P-FinFET. The technique improves the device's electrostatic integrity for pre and post radiation conditions. Both the bulk and proposed devices show a decade improvement in IOFF. Moreover, the SOI devices exhibit 35% and 29% less subthreshold swing for pre-rad condition. After irradiation, trap charges accumulate in oxide and semiconductor/insulator interfaces, resulting in a more negative threshold voltage. The linear gate workfunction modulation increases the Vth for both devices. At a high radiation dose of 2000 krad, the proposed SOI device shows a 39% higher threshold voltage compared to the LGWM bulk P-FinFET. The maximum Vth shift is observed in the single workfunction bulk P-FinFET. Based on the simulation results, the proposed SOI P-FinFET is proven to be better TID tolerant and reliable.
The effect total ionizing dose on a linear gate workfunction modulated SOI P-FinFET is analyzed and compared with the bulk P-FinFET. This technique improves the device electrostatic integrity for pre and post radiation condition. A decade improvement in IOFF is obtained for both the bulk and proposed devices. Moreover, both the SOI devices offer 35% and 29% less subthreshold swing for pre-rad condition. After irradiation trap charges are accumulated in oxide and semiconductor/insulator interfaces, which makes threshold more negative. The linear gate workfunction modulation gives more Vth for both devices. At high radiation of 2000 krad dose proposed SOI device shows 39% more threshold voltage as compared to LGWM bulk P-FinFET. The maximum Vth shift is observed in single workfunction bulk P-FinFET. Based on the simulation results, the proposed SOI P-FinFET is proved to be better TID tolerant and reliable.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据