Study on the electrical breakdown failure mode transition of TSV-RDL

Article Engineering, Electrical & Electronic

Compact high-performance dual-frequency power divider based on TSV

Fengjuan Wang et al.

Summary: In this paper, a dual-frequency compact power divider based on silicon via (TSV) is proposed. The matrix analysis method is used to convert the microstrip structure into pi-type structure, improving the integration of the circuit. The simulated results show that the proposed power divider has good performance with two frequency points at 10 GHz and 20 GHz. Additionally, the size of the power divider is very small, making it suitable for compact circuit designs.

MICROELECTRONICS JOURNAL (2022)

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Article Physics, Condensed Matter

Heavily doped silicon: A potential replacement of conventional plasmonic metals

Md. Omar Faruque et al.

Summary: The study shows that heavily doped p-type silicon exhibits plasmonic properties similar to metals and can overcome challenges posed by metals. Numerical simulation and experimental comparison reveal that a waveguide formed with the p-silicon-air interface can observe the formation and propagation of SPPs similar to MIM waveguides.

JOURNAL OF SEMICONDUCTORS (2021)

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Article Engineering, Electrical & Electronic

Vertical traversal approach towards TSVs optimisation over multilayer network on chip (NoC)

Charanarur Panem et al.

Summary: This study examines the role and challenges of TSVs in symmetric 3-D chip stacking, proposes solutions, and establishes performance models for experimental verification.

MICROELECTRONICS JOURNAL (2021)

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Article Engineering, Electrical & Electronic