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John L. Lyons et al.
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Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers
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Diffusion of Mg dopant in metal-organic vapor-phase epitaxy grown GaN and AlxGa1-xN
K. Koehler et al.
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Jinqiao Xie et al.
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S Hautakangas et al.
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Control of the Mg doping profile in III-N light-emitting diodes and its effect on the electroluminescence efficiency -: art. no. 104914
K Köhler et al.
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Diffusivity of native defects in GaN
S Limpijumnong et al.
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Influence of dopants and substrate material on the formation of Ga vacancies in epitaxial GaN layers -: art. no. 045205
J Oila et al.
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