Recent progress in modification and composite strategies of graphitic carbon nitride as catalysts for heterogeneous photo-Fenton reaction

With the growing problem of water pollution, the search for semiconductor materials that can efficiently degrade refractory pollutants has become urgent. Graphitic carbon nitride (CN, g-C3N4) has attracted much attention due to its suitable energy band position, stable physicochemical properties and simple preparation method. However, the drawbacks such as low specific surface area, narrow light absorption range and high photogenerated carrier recombination rate seriously hinder the further development of CN materials in the field of photo-Fenton. This paper systematically reviews the recent progress in the study of CN-based catalyst modification and composite strategies. Three main modification strategies of CN are introduced, including morphology modulation, vacancy defects, and doping defects. Then binary (including single-atom catalysts, metal oxide loading, and other loadings) and ternary composite strategies based on CN are emphasized. In addition, the charge transfer mechanism of heterojunction and CDs inserted CN are discussed. Finally, the current challenges and possible future directions of CN-based photo-Fenton catalysts are presented. It is believed that this paper can provide useful theoretical information for the industrial development of graphitic carbon nitride in the field of wastewater treatment.

Automated summary

This paper reviews the recent progress in the study of CN-based catalyst modification and composite strategies in the field of photo-Fenton. Three main modification strategies of CN and binary/ternary composite strategies based on CN are introduced. In addition, the charge transfer mechanism of heterojunction and CDs inserted CN are discussed. The current challenges and possible future directions of CN-based photo-Fenton catalysts are presented.