相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Dependences of the hole mobility in the strained Si pMOSFET and gated Hall bars formed on SiGe/Si(110) on the channel direction and the strained Si thickness
Keisuke Arimoto et al.
JOURNAL OF CRYSTAL GROWTH (2021)
Hole mobility enhancement observed in (110)-oriented strained Si
Keisuke Arimoto et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2020)
Strain relaxation process and evolution of crystalline morphologies during the growths of SiGe on Si(110) by solid-source molecular beam epitaxy
Shingo Saito et al.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2020)
Hole mobility in Strained Si/Relaxed SiGe/Si(110) hetero structures studied by gated Hall measurements
Daichi Namiuchi et al.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2020)
Hole generation associated with intrinsic defects in SOI-based SiGe thin films formed by solid-source molecular beam epitaxy
Motoki Satoh et al.
JOURNAL OF APPLIED PHYSICS (2018)
Stability of strain in Si layers formed on SiGe/Si(110) heterostructures
Keisuke Arimoto et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2018)
Growth of strained Si/relaxed SiGe heterostructures on Si(110) substrates using solid-source molecular beam epitaxy
Keisuke Arimoto et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2017)
The channel mobility degradation in a nanoscale metal-oxide-semiconductor field effect transistor due to injection from the ballistic contacts
Munawar A. Riyadi et al.
JOURNAL OF APPLIED PHYSICS (2011)
Acceptorlike behavior of defects in SiGe alloys grown by molecular beam epitaxy
Motoki Satoh et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2008)
Very high carrier mobility for high-performance CMOS on a Si(110) surface
Akinobu Teramoto et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2007)
(110)-surface strained-SOI CMOS devices
T Mizuno et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2005)
1.5-nm gate oxide CMOS on (110) surface-oriented Si substrate
HS Momose et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2003)