Analysis of Zn diffusion in various crystallographic directions of GaN grown by HVPE

Article Engineering, Electrical & Electronic

Zn-Doped GaN Comprising the Gate Structure of Normally Off AlGaN/GaN-HFETs

Norikazu Ito et al.

Summary: A mesa gate structure with Zn-doped GaN enables the normally off operation of AlGaN/GaN heterostructure field-effect transistors (HFETs) and estimates the energy level of Zn within the energy band of GaN.

IEEE ELECTRON DEVICE LETTERS (2022)

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Article Physics, Applied

Thermal annealing of GaN implanted with Be

M. A. Reshchikov et al.

Summary: Investigation of Be-implanted GaN samples subjected to annealing under different conditions revealed the activation of shallow Be-Ga acceptor and the presence of Be-Ga-related defects, as analyzed by low-temperature photoluminescence spectra.

JOURNAL OF APPLIED PHYSICS (2022)

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Article Engineering, Electrical & Electronic

Investigation of beryllium diffusion in HVPE-GaN grown in [11-20] and [10-10] crystallographic directions

Kacper Sierakowski et al.

Summary: The diffusion of beryllium in gallium nitride crystals grown in non-polar crystallographic directions was investigated. The diffusion profiles were found to be box-shaped and pre-exponential factors and activation energies were determined. A model based on point defect complexes was proposed to explain the profiles and visible differences between the two directions.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2022)

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Article Physics, Condensed Matter

Effect of Ultra‐High‐Pressure Annealing on Defect Reactions in Ion‐Implanted GaN Studied by Positron Annihilation

Akira Uedono et al.

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2022)

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Article Physics, Applied

Vertical GaN p+-n junction diode with ideal avalanche capability grown by halide vapor phase epitaxy

Kazuki Ohnishi et al.

Summary: A vertical GaN p(+)-n junction diode with an ideal breakdown voltage was successfully grown by halide vapor phase epitaxy (HVPE). The steep p(+)-n interface was observed and no Si-accumulating layer was formed due to continuous growth. This method offers improved electrical properties compared to regrowth of p-type GaN layers, with a minimum ideality factor of approximately 1.6.

APPLIED PHYSICS LETTERS (2021)

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Article Physics, Multidisciplinary

Shallow and Deep States of Beryllium Acceptor in GaN: Why Photoluminescence Experiments Do Not Reveal Small Polarons for Defects in Semiconductors

D. O. Demchenko et al.

Summary: By using photoluminescence measurements and hybrid density functional theory, researchers have found a shallow effective mass state for the Be-Ga acceptor in GaN, with a level at 113 +/- 5 meV above the valence band. Calculations indicate that the BeGa acceptor has a bright shallow state responsible for the 3.38 eV PL band, as well as a dark, strongly localized small polaronic state with a lower hole capture efficiency.

PHYSICAL REVIEW LETTERS (2021)

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Article Chemistry, Physical

Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography

Lutz Kirste et al.

Summary: This paper presents an X-ray topography defect analysis of entire 1.8-inch GaN substrates using the Borrmann effect. The study successfully traced the process and growth history of GaN crystals by imaging their defect patterns, detecting various microscopic and macroscopic defects, and discussing the influences of seed crystal preparation and crystal growth process parameters on defect formation.

MATERIALS (2021)

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Article Physics, Applied

p-type conductivity in GaN:Zn monocrystals grown by ammonothermal method

M. Zajac et al.

Summary: This study reports the crystallization of bulk GaN:Zn monocrystals using ammonothermal method. Despite high Zn doping level, low p-type conductivity was observed with a high ionization energy of Zn acceptor. Additionally, conduction in the impurity band was observed even at room temperature.

JOURNAL OF APPLIED PHYSICS (2021)

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Article Crystallography

Recent progress in basic ammonothermal GaN crystal growth

K. Grabianska et al.

JOURNAL OF CRYSTAL GROWTH (2020)

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Article Physics, Condensed Matter

Investigation of diffusion mechanism of beryllium in GaN

Rafal Jakiela et al.

PHYSICA B-CONDENSED MATTER (2020)

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Article Physics, Applied

Synchrotron radiation X-ray topography and defect selective etching analysis of threading dislocations in halide vapor phase epitaxy GaN crystal grown on ammonothermal seed

Tomasz Sochacki et al.

JAPANESE JOURNAL OF APPLIED PHYSICS (2019)

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Article Physics, Applied

Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing

Hideki Sakurai et al.

APPLIED PHYSICS LETTERS (2019)

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Article Physics, Condensed Matter

Computational study of positron annihilation parameters for cation mono-vacancies and vacancy complexes in nitride semiconductor alloys

Shoji Ishibashi et al.

JOURNAL OF PHYSICS-CONDENSED MATTER (2019)

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Review Physics, Applied

The 2018 GaN power electronics roadmap

H. Amano et al.

JOURNAL OF PHYSICS D-APPLIED PHYSICS (2018)

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Article Physics, Multidisciplinary

Amphoteric Be in GaN: Experimental Evidence for Switching between Substitutional and Interstitial Lattice Sites

Filip Tuomisto et al.

PHYSICAL REVIEW LETTERS (2017)

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Review Chemistry, Physical

Computationally predicted energies and properties of defects in GaN

John L. Lyons et al.

NPJ COMPUTATIONAL MATERIALS (2017)

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Article Materials Science, Multidisciplinary

Implantation damage formation in a-, c- and m-plane GaN

K. Lorenz et al.

ACTA MATERIALIA (2017)

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Article Crystallography

Homoepitaxial HVPE-GaN growth on non-polar and semi-polar seeds

M. Amilusik et al.

JOURNAL OF CRYSTAL GROWTH (2014)

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Article Crystallography

HVPE-GaN grown on MOCVD-GaN/sapphire template and ammonothermal GaN seeds: Comparison of structural, optical, and electrical properties

Tomasz Sochacki et al.

JOURNAL OF CRYSTAL GROWTH (2014)

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Article Crystallography

Examination of growth rate during hydride vapor phase epitaxy of GaN on ammonothermal GaN seeds

T. Sochacki et al.

JOURNAL OF CRYSTAL GROWTH (2014)

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Article Physics, Multidisciplinary

Defect identification in semiconductors with positron annihilation: Experiment and theory

Filip Tuomisto et al.

REVIEWS OF MODERN PHYSICS (2013)

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Article Materials Science, Multidisciplinary

Two-step thermal quenching of photoluminescence in Zn-doped GaN

Michael A. Reshchikov

PHYSICAL REVIEW B (2012)

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Article Engineering, Electrical & Electronic

Non-polar and semi-polar ammonothermal GaN substrates

R. Kucharski et al.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2012)

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Proceedings Paper Electrochemistry

Processing of Mechanically Polished Surfaces of Bulk GaN Substrates

G. Nowak et al.

SEMICONDUCTOR CLEANING SCIENCE AND TECHNOLOGY 12 (SCST 12) (2011)

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Article Instruments & Instrumentation

SRIM - The stopping and range of ions in matter (2010)

James F. Ziegler et al.

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2010)

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Article Physics, Applied

Nonpolar GaN substrates grown by ammonothermal method

R. Kucharski et al.

APPLIED PHYSICS LETTERS (2009)

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Article Chemistry, Physical

Diffusion of Mn in gallium arsenide

R. Jakiela et al.

JOURNAL OF ALLOYS AND COMPOUNDS (2006)

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Article Materials Science, Multidisciplinary

Diffusion and activation of Zn implanted into InP:S

R Jakiela et al.

VACUUM (2005)

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Article Physics, Applied

Electrical activation characteristics of silicon-implanted GaN

Y Irokawa et al.

JOURNAL OF APPLIED PHYSICS (2005)

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Article Physics, Applied

Co-implantation of Si+N into GaN for n-type doping

Y Nakano et al.

JOURNAL OF APPLIED PHYSICS (2002)

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Article Instruments & Instrumentation

Ion implantation of silicon carbide

A Hallen et al.

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2002)

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Analysis of Zn diffusion in various crystallographic directions of GaN grown by HVPE

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